The use of spectroscopic ellipsometry to predict the radiation response of simox

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 2277-2283

  Mrstik, B J ^a   Hughes, H L ^a   McMarr, P J ^b   Lawrence, R K ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SFA INC   (United States)

^c ARACOR/SFA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; DENSITY (SPECIFIC GRAVITY); ETCHING; GATES (TRANSISTOR); ION IMPLANTATION; OXIDES; OXYGEN; RADIATION EFFECTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR INSULATOR BOUNDARIES; THERMAL EFFECTS; VOLTAGE MEASUREMENT;

BURIED OXIDE; RADIATION RESPONSE; SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0028713286     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340576     Document Type: Article

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