Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

Physical Review B

Volumn 27, Issue 2, 1983, Pages 985-1009

  Aspnes, D E ^a   Studna, A A ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33847596250     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.27.985     Document Type: Article

References (156)

1. Summary Abstract: Preparation of high-quality surfaces on semiconductors by selective chemical etching
2. Effect of Surface Damage on the Reflectance of Germanium in the 2650-10 000-Å Region
3. Spectroscopic Analysis of the Interface Between Si and Its Thermally Grown Oxide
4. Band Structure and Optical Properties of In1-xGaxAsyP1-y
5. Errors in "Effects of component optical activity in data reduction and calibration of rotating-analyzer ellipsometers"
6. Effect of a Thin Surface Film on the Ellipsometric Determination of Optical Constants
7. Optical Constants of Epitaxial Silicon in the Region 1–3.3 eV
8. Optical Measurement of Film Growth on Silicon and Germanium Surfaces in Room Air
9. An Investigation of the Optical Properties and the Growth of Oxide Films on Silicon
10. Ellipsometric Method for the Determination of All the Optical Parameters of the System of an Isotropic Nonabsorbing Film on an Isotropic Absorbing Substrate Optical Constants of Silicon
11. Determination of Optical Constants from Reflectance or Transmittance Measurements on Bulk Crystals or Thin Films
12. Determination of the Properties of Films on Silicon by the Method of Ellipsometry
13. Ellipsometric liquid immersion method for the determination of all the optical parameters of the system: Nonabsorbing film on an absorbing substrate
14. Generalized Ellipsometric Method for the Absorbing Substrate Covered with a Transparent-Film System Optical Constants of Silicon at 3655 Å
15. Simple Method for the Determination of Optical Constants of Absorbing Materials
16. Das Reflexionsvermögen von Germanium- und Silizium-Einkristallen bei elastischer Deformation
17. Parameter-Correlation and Computational Considerations in Multiple-Angle Ellipsometry
18. Generalized Ellipsometric Method for the Absorbing Substrate Covered with a Transparent-Film System Optical Constants of Silicon at 3655 Å
19. Optical Constants of Germanium in the Region 0–10 ev
20. Proceedings of the International Conference on the Physics of Semiconductors, Kyoto, 1966
21. Determination of optical constants: Disordered germanium
22. Ellipsometry of Anodic Oxide Films on GaAs
23. Ellipsometric investigations of oxide films on Ga As
24. Modified Kramers-Kronig Analysis of Optical Spectra
25. ANODIC OXIDE FILMS ON INDIUM ANTIMONIDE