Numerical analysis of device performance of metamorphic InAli-As/InGai-As (0.3 < x < 0.6) HEMT's on GaAs substrate

IEEE Transactions on Electron Devices

Volumn 45, Issue 10, 1998, Pages 2089-2095

  Happy, Henri ^a   Bollaert, Sylvain ^a   Fouré, Hervé ^a   Cappy, Alain ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MONTE CARLO METHODS; PARTIAL DIFFERENTIAL EQUATIONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

POISSON'S EQUATION; SCHRODINGER EQUATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032188542     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.725240     Document Type: Article

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