Physics-Based Electron Device Modelling and Computer-Aided MMIC Design

IEEE Transactions on Microwave Theory and Techniques

Volumn 40, Issue 7, 1992, Pages 1333-1352

  Filicori, Fabio ^a   Ghione, Giovanni ^b   Naldi, Carlo U ^b  

^a UNIVERSITY OF FERRARA   (Italy)

^b POLITECNICO DI TORINO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN--APPLICATIONS; INTEGRATED CIRCUITS, MONOLITHIC--MICROWAVES; OPTIMIZATION--APPLICATIONS;

CIRCUIT-ORIENTED DEVICE PERFORMANCE ASSESSMENT; COMPUTER AIDED MMIC DESIGN; INTERMEDIATE BEHAVIOR MODELS; PARAMETRIC SENSITIVITY ANALYSIS; PHYSICS-BASED ELECTRON DEVICE MODELLING; YIELD OPTIMIZATION;

INTEGRATED CIRCUITS, MONOLITHIC;

EID: 0026884998     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.146317     Document Type: Article

References (118)

1. N. G. Alexopoulos, J. A. Maupin, and P. T. Greiling, “Determination of the electrode capacitance matrix for GaAs FET’s,” IEEE Trans. Microwave Theory Tech., vol. MTT-28, no. 5, pp. 459–466, May 1980.
2. Y. Ando and T. Itoh, “DC, small-signal and noise modelling for two-dimensional electron gas field-effect transistor based on accurate charge-control characteristics,” IEEE Trans. Electron Devices, vol. 37, no. 1, pp. 67–78, Jan. 1990.
3. R. Anholt, T. W. Sigmon, and M. D. Deal, “Process and Devices Models for GaAs MESFET technology,” in Tech. Dig. 1987 GaAs lC Symp., Portland,. 1987, pp. 53–56.
4. R. Anholt and T. W. Sigmon, “A process and device model for GaAs MESFET technology: GATES,” IEEE Trans. Computer-Aided Design, vol. 8, no. 4, pp. 350–359, April 1989.
5. R. Anholt, R. Worley, and R. Neidhard, “Statistical analysis of GaAs MESFET S-parameter equivalent circuit models,” Int. J. Microwave and Millimeter-Wave Computer-Aided Engineering, vol. 1, no. 3, pp. 263–270, 1991.
6. R. Anholt, J. King, R. Worley, and J. Gillespie, “Relationships between process and materials variations and variations in S- and equivalent-circuit parameters,” Int. J. Microwave and Millimeter-Wave Computer-Aided Engineering, vol. 1, no. 3, pp. 271–281, 1991.
7. W. Baechtold, “Noise behaviour of GaAs field-effect transistors with short gate lengths,” IEEE Trans. Electron Devices, vol. ED-19, no. 5, pp. 674–680, May 1972.
8. J. W. Bandler and S. H. Chen, “Circuit optimization: The State of the Art,” IEEE Trans. Microwave Theory Tech., vol. 36, no. 2, pp. 424–442, Feb. 1988.
9. J. W. Bandler, Q. J. Zhang, R. M. Biernacki, “A unified, theory for frequency-domain simulation and sensitivity analysis of linear and nonlinear circuits,” IEEE Trans. on Microwave Theory Tech., vol. 36, no. 12, pp. 1661–1669, Dec. 1988.
10. J. W. Bandler, Q. J. Zhang, and S. H. Chen, “Efficient large-signal FET parameter extraction using harmonics,” IEEE Trans. Microwave Theory Tech., vol. 37, no. 12, pp. 2099–2108, Nov. 1989.
11. J. W. Bandler, R. M. Biernacki, S. H. Chen, J. Song, S. Ye, and Q. J. Zhang, “Gradient quadratic approximation scheme for yield-driven design,” in 1991 IEEE MTT-S Microwave Symp. Dig., pp. 1197–1200.
12. J. W. Bandler, Q. J. Zhang, and Q. Cai, “Nonlinear circuit optimization with dynamically integrated physical device models,” in 1991 IEEE MTT-S Microwave Symp. Dig., pp. 303–306.
13. J. W. Bandler, R. M. Biernacki, Q. Cai, S. H. Chen, S. Ye, and Q. J. Zhang, “Integrated physics-oriented statistical modeling, simulation and optimization,” IEEE Trans. Microwave Theory Tech., vol. 40, no. 7, July 1992.
14. J. W. Bandler, R. M. Biernacki, Q. Cai, S. H. Chen, S. Ye, “Statistical modelling of GaAs MESFET’s,” in 1991 IEEE MTT-S Microwave Symp. Dig., pp. 87–90.
15. T. M. Barton and P. H. Ladbrooke, “The role of the device surface in the high voltage behaviour of the GaAs MESFET,” Solid-State Electron., vol. 29, no. 8, pp. 807–813, 1986.
16. A. Benvenuti, A. Cetronio, G. Ghione, R. Liberati, C. U. Naldi, and M. Pirola, “Physical simulation: a tool for technological evaluation and optimization of GaAs MESFET devices,” in Proc. GAAS'90, Rome, April 1990, pp. 96–101.
17. R. M. Biernacki M. A. Styblinski, “Statistical circuit design with dynamic constraint approximation scheme,” in Proc. IEEE Int. Symp. on Circuits and Systems, 1986, pp. 941–944.
18. K. Blotekjaer, “Transport Equations for Electron in Two-Walley Semiconductors,” IEEE Trans. Electron Devices, vol. ED-17, no. 1, pp. 38–47, Jan. 1970.
19. E. Bonani, G. Ghione, and C. U. Naldi, “A CAD-oriented quasi-physical HEMT noise model for device design and optimization,” Proc. GAAS'92, Nordwijk, 1992.
20. P. Bonjour, R. Castagné, J-F. Pône, J-P. Courat, G. Bert, G. Nuzillat, and M. Peltier, “Saturation mechanism in 1-μm gate GaAs FET with channel-substrate interfacial barrier,” IEEE Trans. Electron Devices, vol. ED-27, no. 6, pp. 1019–1024, June 1980.
21. T. M. Brookes, “The noise properties of high-electron mobility transistors,” IEEE Trans. Electron Devices, vol. ED-33, no. 1, pp. 52-57, Jan. 1986.
22. F. A. Buot and J. Frey, “Effects of velocity overshoot on performance of GaAs devices, with design information,” Solid-State Electron., vol. 26, no. 7, pp. 617–632, 1983.
23. J. Bussgang, L. Ehrman, and J. Graham, “Analysis of nonlinear systems with multiple inputs,” Proc. IEEE, vol. 62, no. 8, pp. 1088–1119, Aug. 1974.
24. A. Cappy, “Noise modelling and measurement techniques,” IEEE Trans. Microwave Theory Tech., vol. 36, no. 1, pp. 1–10, Jan. 1988.
25. B. Carnez, A. Cappy, A. Kaszynski, E. Constant, and G. Salmer, “Modelling of a submicrometer gate field-effect transistor including effects of nonstationary electron dynamics,” J. Appl. Phys., vol. 51, no. 1, pp. 784–790, Jan. 1980.
26. B. Carnez A. Cappy, R. Fauquembergue, E. Constant, and G. Salmer, “Noise modelling in submicrometer-gate FET’s MESFET,” IEEE Trans. Electron Devices, vol. ED-28, no. 7, pp. 784–789, July 1981.
27. C.-S. Chang and D.-Y. S. Day, “Analytic theory for current-voltage characteristics and field distribution of GaAs MESFET’s,” IEEE Trans. Electron Devices, vol. 36, no. 2, pp. 269–280, Feb. 1988.
28. R. K. Cook and J. Frey, “Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET’s,” IEEE Trans. Electron Devices, vol. ED-29, no. 6, pp. 970–977, June 1982.
29. W. R. Curtice and Y. H. Yun, “A temperature model for the GaAS MESFET,” IEEE Trans. Electron Devices, vol. ED-28, no. 8, pp. 954–962, Aug. 1981.
30. W. R. Curtice, “Direct comparison of the electron-temperature model with the particle-mesh (Monte-Carlo) model for the GaAS MESFET,” IEEE Trans. Electron Devices, vol. ED-29, no. 12, pp. 1942–1943, Dec. 1982.
31. W. R. Curtice, “GaAs MESFET modelling and nonlinear CAD,” IEEE Trans. Microwave Theory Tech., vol. MTT-36, no. 2, pp. 220–230, Feb. 1988.
32. H. Daembkes, Ed., Modulation-Doped Field-Effect Transistors: Principle, Design and Technology, IEEE Press, 1990.
33. R. R. Daniels, J. P. Harrang, and A. Yang, “A nonquasi-static, large signal FET model derived from small signal S -parameters,” Proc. ISDRS'91, Charlottesville, VA, Dec. 1991, pp. 601–604.
34. P. de Santis, “Extension of existing models to ion-implanted MESFET’s,” IEEE Trans. Microwave Theory Tech., MTT-28, no. 6, pp. 638–647, June 1980.
35. S. W. Director and D. A. Rohrer, “Automated network design—The frequency-domain case,” IEEE Trans. Circuit Theory, no. 8, pp. 330–337, Aug. 1969.
36. Y. K. Feng, “New v(E) Relationship of GaAs,” Electron. Lett., vol. 21, no. 10, May 1985, pp. 453–454.
37. Y. K. Feng and A. Hintz, “Simulation of submicrometer GaAs MESFET’s using a full dynamic transport model,” IEEE Trans. Electron Devices, vol. 35, no. 9, pp. 1419–1431, Sept. 1988.
38. F. Filicori and V. A. Monaco, “Computer-aided design of nonlinear microwave circuits,” Alta Frequenza, vol. LVII, no. 7, pp. 355–378, Sep. 1988.
39. F. Filicori and G. Vannini, “Mathematical approach to large-signal modelling of electron devices,” Electron. Lett., vol. 27, no. 4, pp. 357–359, Feb. 1991.
40. F. Filicori, V. A. Monaco, and G. Vannini, “A nonlinear integral model of electron devices for HB circuit analysis,” IEEE Trans. Microwave Theory Tech., IEEE Trans. Microwave Theory Tech., vol. 40, no. 7, July 1992.
41. H. Fukui, “Optimal noise figure of microwave GaAs MESFET’s,” IEEE Trans. Electron Devices, vol. ED-26, no. 7, pp. 1032–1037, July 1979.
42. G. Ghione and C. Naldi, “Modelling and simulation of wave propagation effects in MESFET devices based on physical models,” in Proc. ESSDERC'87, Bologna, Italy, Sept. 1987, pp. 317–320.
43. G. Ghione, P. Golzio, and C. Naldi, “Self-consistent thermal modelling of GaAs MESFET’s: a comparative analysis of power device mountings,” Alta Frequenza, pp. 311–319, Sept. 1988.
44. G. Ghione, C. Naldi, F. Filicori, M. Cipelletti, and G. Locatelli, “MESS—A two-dimensional physical device simulator and its application to the development of C-band power GaAs MESFET’s,” Alta Frequenza, pp. 295–309, Sept. 1988.
45. G. Ghione, C. Naldi, F. Filicori, M. Cipelletti, and G. Locatelli, “Physical modelling of GaAs MESFET’s in an integrated CAD environment: from device technology to microwave circuit performance,” IEEE Trans. Microwave Theory Tech., vol. 37, pp. 457–468. Mar. 1989.
46. G. Ghione and C. Naldi, “High-resolution self-consistent thermal modelling of multi-gate power GaAs MESFET’s,” in Proc. Int. El. Dev. Meeting'89, pp. 6.5.1-4.
47. G. Ghione, E. Bellotti, F. Filicori, “Physical noise modelling of majority-carrier devices: an adjoint-network approach,” in Proc. Int. El. Dev. Meeting'89, pp. 12.6.1-4.
48. G. Ghione, “A two-dimensional approach to the noise simulation of GaAs MESFET’s,” in Proc. ESSDERC'90, Nottingham, U.K., Sept. 1990, pp. 225–229.
49. G. Ghione and F. Filicori, “A computationally efficient unified approach to the numerical analysis of the sensitivity and noise of semiconductor devices,” IEEE Trans. Computer-Aided Design, to be published.
50. R. Goyal, M. Golio, and W. Thomann, “Low-Frequency Anomalies in GaAs MESFET’s, Sec. 4.1.6.1, Monolithic Microwave Integrated Circuits, R. Goyal, Ed. Dedham, MA: Artech House, 1989.
51. R. J. Gilmore, M. Eron, and T. Zhang, “Yield optimization of a MMIC distributed amplifier using physically-based device models,” in 1991 IEEE MTT-S Microwave Symp. Dig., pp. 1205–1208.
52. A. Gnudi, P. Ciampolini, R. Guerrieri, M. Rudan, and G. Baccarani, “Sensitivity analysis for device design,” in Proc. ESSDERC'87, Bologna, Italy, Sept. 1987, pp. 551–554, and IEEE Trans. Computer-Aided Design, vol. CAD-6, no. 5, pp. 879–885, Sept. 1987.
53. J. Graffeuil and P. Rossel, “Semi-empirical expression for direct transconductance and equivalent saturated velocity in short-gate length MESFET’s, Proc. IEE, vol. 129, pt. I, pp. 185–188, Oct. 1982.
54. W. Heinrich and H. L. Hartnagel, “Wave propagation on MESFET electrodes and its influence on transistor gain,” IEEE Trans. Microwave Theory Tech., vol. MTT-35, no. 1, pp. 1–8, Jan. 1987.
55. K. Hess, Advanced Theory of Semiconductor Devices. Englewood Cliffs, NJ: Prentice-Hall, 1988.
56. J. A. Higgins, “Modelling the influence of carrier profiles on MESFET characteristics,” IEEE Trans. Electron Devices, ED-27, no. 6, pp. 1066-1073, June 1980.
57. J. A. Higgins and D. N. Pattanayak, “A numerical approach to modelling the ultrashort gate MESFET,” IEEE Trans. Electron Devices, vol. ED-29, no. 2, Feb. 1982.
58. Y. Hu, J. Obregon, and J. C. Mollier, “Nonlinear analysis of microwave FET oscillators using Volterra series,” IEEE Trans. Microwave Theory Tech., vol. 37, no. 11, pp. 1689–1693, Nov. 1989.
59. J. Baucells, A. Mediavilla, and A. Tazon, “Nonlinear analysis,” in GaAs MESFET Circuit Design, R. Soares Ed. Norwood, MA: Artech House, 1988.
60. G. Iuculano, V. A. Monaco, and P. Tiberio, “Network sensitivities in terms of scattering parameters,” Electron. Lett., vol. 7, pp. 53–55, Jan. 1971.
61. C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation. Berlin: Springer-Verlag, 1990.
62. R. H. Jansen, “The Spectral-Domain Approach for Microwave Integrated Circuits,” IEEE Trans. Microwave Theory Tech., vol. MTT-33, no. 10, pp. 1043–1056, Oct. 1985.
63. R. H. Jansen, “LINMIC: a CAD package for the layout-oriented design of single- and multi-layer MICs/MMICs up to mm-wave frequencies,” Microwave J., vol. 29, no. 2, pp. 151–161, 1986.
64. R. H. Jansen, “Advanced CAD/CAM software for process-related MMIC design,” Proc. ESA Workshop on MICs for Space Applications, Sec. 7/2. Mar. 1990, pp. 1–12.
65. R. H. Jansen and P. Pogatzki, “Nonlinear distributed modelling of multifinger FET’s/HEMT’s in terms of layout geometry and process data,” Proc. 21st Eur. Microwave Conf., 1991, pp. 609–614.
66. A. K. Jastrzebsky, “MESFET modeling and parameter extraction,” in GaAs Technology and its Impact on Circuits and Systems. D. Haig and J. Everard, Eds. London: Peregrinus, 1989.
67. C. Kermarrec and C. Rumelhard, “Microwave monolithic integrated circuits,” in GaAs MESFET Circuit Design, R. Soares, Ed. Dedham, MA: Artech House, 1988, ch. 9.
68. M. A. Khatibzadeh and R. J. Trew, “A large-signal analytic mode for GaAs MESFET,” IEEE Trans. Microwave Theory Tech., vol. MTT-36, no. 2, pp. 231–238, Feb. 1988.
69. R. L. Kuvas, “Equivalent circuit model of FET including distributed gate effects,” IEEE Trans. Electron Devices, vol. ED-27, no. 6, pp. 1193–1195, June 1980.
70. P. H. Ladbrooke and S. R. Blight, “Low-field low-frequency dispersion of transconductance in GaAs MESFET’s with implications for other rate-dependent anomalies,” IEEE Trans. Electron Devices, vol. 35, no. 3, pp. 257–267, Mar. 1988.
71. P. H. Ladbrooke, MMIC Design: GaAs FETs and HEMTs. Dedham, MA: Artech House, 1989.
72. M. Lee, L. Forbes, T. Hallen, and P. Tuineega, “An analytical self-backgating GaAs MESFET model including deep-level trap effects,” in Proc. Int. El. Dev. Meeting'89, Dec. 1989, pp. 12.3.1-12.3.4.
73. LIBRA, reference manual, EESsof Ind., 1989.
74. LINMIC + CAD Package, User Manual, Jansen Microwave, Ratingen, Germany, 1989.
75. S. A. Maas, Nonlinear microwave circuits. Dedham, MA: Artech House, 1988.
76. A. Madjar and F. J. Rosenbaum, “A Large-Signal Model for the GaAs MESFET,” IEEE Trans. Microwave Theory Tech., vol. MTT-29, no. 8, pp. 781–788, Aug. 1981.
77. Microwave Harmonica, reference manual, Compact Software, Paterson, NJ.
78. R. A. Minasian, “Large signal GaAS MESFET model and distortion analysis,” Electron. Lett., vol. 14, no. 6, pp. 183–185, Mar. 1978.
79. A. Moatadid, D. Gasquet, M. de Murcia, and G. P. Nougier, “Noise of GaAs diodes,” in Proc. ESSDERC'1988, Montpellier, Sept. 1988, 583–586.
80. M. S. Mock, Analysis of Mathematical Models of Semiconductor Devices. Dublin: Boole Press, 1983.
81. C. Moglestue, “A self-consistent Monte Carlo particle model to analyze semiconductor microcomponents of any geometry,” IEEE Trans. Computer-Aided Design, vol. CAD-5, no. 2, pp. 326–345, April 1986.
82. V. A. Monaco and P. Tiberio, “Computer-aided analysis of microwave circuits,” IEEE Trans. Microwave Theory Tech., vol. MTT-22, no. 3, pp. 249–263, Mar. 1974.
83. C. Naldi and F. Filicori, “QSS-Quick steady state analysis program,” European Space Agency Rep. No. 3334/77B, Pt. 2, Jan. 1980.
84. C. U. Naldi and G. Ghione, “Device simulation,” in III-V Micro-electronics, J. P. Nougier, Ed., vol. 2, European Materials Research Society Monographs, North Holland, 1991, pp. 89–114.
85. J. P. Nougier, “Noise and diffusion of hot carriers,” in Physics of Nonlinear Transport in Semiconductors, D. K. Ferry, J. R. Barker, C. Jacoboni, Eds., New York: Plenum 1980, pp. 415–465.
86. J. P. Nougier, “Origine du bruit dans les dispositifs à semiconducteurs,” Revue Phys. Appl., vol. 22, pp. 803–819, Aug. 1987.
87. OSA90/hope™, reference manual, Optimization System Associates Inc., Dundas, ON, Canada, 1991.
88. R. R. Pantoja, M. J. Howes, J. R. Richardson, and C. M. Snowden, “A large-signal physical MESFET model for computer-aided design and its applications,” IEEE Trans. Microwave Theory Tech., vol. MTT-37, no. 12, pp. 2039–2045, Dec. 1989.
89. A. Papoulis, Probability, Random Variables, and Stochastic Processes. McGraw-Hill Kogakusha, 1965.
90. D. Pavlidis, J-L. Cazaux, and J. Graffeuil, “The influence of ion-implanted profiles on the performance of GaAs MESFETs and MMIC Amplifiers,” IEEE Trans. Microwave Theory Tech., vol. 36, no. 4, pp. 642–652, Apr. 1988.
91. E. Pettenpaul, F. Ponse, O. Berger, and H. Kapusta, “Device-physics and equivalent circuit model for GaAs MESFET’s Siemens Forsch.-u. Entwickl.-Ber., vol. 16, no. 5, pp. 210–218, 1987.
92. P. Pouvil, J.-L. Gautier, and D. Pasquet, “A new analytical model for the GaAs MESFET in the saturation region,” IEEE Trans. Electron Devices, vol. ED-35, no. 8, pp. 1215–1222, Aug. 1988.
93. R. A. Pucel, H. A. Haus, and H. Statz, “Signal and noise properties of gallium arsenide microwave field-effect transistors,” in Advances in Electronics and Electron Physics, vol. 38, New York: Academic, 1975, pp. 195–265.
94. J. Purviance, D. Criss and D. Monteith, “FET model statistics and their effects on design centering,” in 1988 IEEE MTT-S Microwave Symp. Dig., p. 315, June 1988.
95. J. Purviance, M. C. Petold and C. Potratz, “A linear statistical FET model using principal component analysis,” IEEE Trans. Microwave Theory Tech., vol. 36, no. 9, pp. 1389–1395, 1989.
96. J. Purviance and M. Meehan, “CAD for statistical analysis and design of microwave circuits,” Int. J. Microwave and Millimter-Wave Computer-Aided Engineering, vol. 1, no. 1, pp. 59–76, Jan. 1991.
97. C. Rauscher, H. A. Willing, “Simulation of nonlinear microwave FET performance using a quasi-static model,” IEEE Trans. Microwave Theory Tech., vol. MTT-27, no. 10, pp. 834–840, Oct. 1979.
98. V. Rizzoli, C. Cecchetti, A. Lipparini, and F. Mastri, “General-purpose harmonic balance analysis of nonlinear microwave circuits under multitone excitations,” IEEE Trans. on Microwave Theory Tech., vol. 36, pp. 1650–1660, Dec. 1988.
99. D. Rohrer, L. Nagel, R. Myer, and L. Weber, “Computationally efficient electronic-circuit noise calculation,” IEEE J. Solid-State Circuits, vol. SC-6, no. 4, pp. 204–212, Aug. 1971.
100. D. E. Root, S. Fan, and J. Meyer, “Technology-independent large-signal non quasi-static models by direct construction from automatically characterized device data,” in Proc. 21st European Microwave Conf., Stuttgart, Sept. 1991, pp. 927–932.
101. P. A. Sandbom, J. R. East, and G. I. Haddad, “Quasi-two-dimensional modelling of GaAs MESFET’s,” IEEE Trans. Electron Devices, vol. ED-34, no. 5, pp. 985–991, May 1987.
102. D.L. charfetter and H. K. Gummel, “Large signal analysis of a silicon read diode oscillator,” IEEE Trans. Electron Devices, vol. ED-16, no. 1, pp. 64–77, Jan. 1969.
103. S. Selberherr, Analysis and Simulations of Semiconductor Devices. Berlin: Springer-Verlag, Wien 1984.
104. W. Shockley, J. A. Copeland, and R. P. James, “The impedance field method of noise calculation in active semiconductor devices,” in Quantum Theory of Atoms, Molecules and Solid State, P. O. Lowdin Ed. New York: Academic Press, 1966. pp. 537–563.
105. M. S. Shur, “Analytical model of GaAs MESFET’s,” IEEE Trans. Electron Devices, ED-25, no. 6, pp. 612–618, June 1978.
106. H. Sledzik and I. Wolf, “Large-signal modeling and simulation of GaAs MESFETs and HFETs,” Int. J. Microwave and Millimeter-Wave Computer-Aided Engineering, vol. 2, no. 1, pp. 49–60, 1992.
107. C. M. Snowden, “Computer-aided design of MMIC’s based on physical device models,” Proc. Inst. Elec. Eng., vol. 133, pt. H, pp. 419–427, Oct. 1986.
108. C. M. Snowden and D. Loret, “Two-dimensional hot-electron models for short-gate length GaAS MESFET’s,” IEEE Trans. Electron Devices, vol. ED-34, no. 2, pp. 212–223, Feb. 1987.
109. C. M. Snowden and R. R. Pantoja, “Quasi-two-dimensional simulations for CAD,” IEEE Trans. Electron Devices, vol. ED-36, no. 9, Sept. 1989.
110. C. M. Snowden, “Microwave and millimeter-wave device and circuit design based on physical modelling,” Int. J. Microwave and Millimeter-Wave Computer-Aided Engineering, vol. 1, no. 1, pp. 4-21, Jan. 1991.
111. R. J. Trew, M. A. Khatibzadeh, and N. A. Masnari, “Deep-level and profile effects upon low-noise ion-implanted GaAs MESFET’s,” IEEE Trans. Electron Devices, vol. ED-32, no. 5, pp. 877–882, May 1985.
112. R. L. Vaitkus, “Uncertainty in the values of GaAs MESFET equivalent circuit elements extracted from measured two-port scattering parameters,” Proc. IEEE Cornell Conf. on High-Speed Semiconductor Devices and Circuits, Aug. 1983, 301–308.
113. A. van der Ziel, Noise: Sources, Characterization, Measurements. Englewood, Cliffs, NJ: Prentice-Hall 1970.
114. V. Volterra, Theory of Functionals and of Integral and Integro-Differential Equation New York: Dover, 1959.
115. C. K. Williams, T. H. Glisson, J. R. Hauser, M. A. Littlejohn, and M. F. Abusaid, “Two-dimensional Monte Carlo simulation of a submicron GaAs MESFET with a nonuniformly doped channel,” Solid-State Electron., vol. 28, no. 11, pp. 1105–1109, 1985.
116. H. A. Willing, C. Rauscher, and P. De Santis, “A technique for predicting large-signal performance of a GaAs MESFET,” IEEE Trans. Microwave Theory Tech., vol. MTT-26, no. 12, pp. 1017—1023, Dec. 1978.
117. K. Yamaguchi and H. Kodera, “Drain conductance of junction gate FET’s in the hot electron range,” IEEE Trans. Electron Devices, vol. ED-23, no. 6, pp. 545–553, June 1976.
118. K. Yamaguchi, S. Asai, and H. Kodera, “Two-dimensional numerical analysis of stability criteria of GaAs FET’s,” IEEE Trans. Electron Devices, vol. ED-23, no. 12, pp. 1283–1290, Dec. 1976.