Theoretical Analysis of an A10.15Ga0.85As/ In0.15Ga0.85As Pseudomorphic HEMT Using an Ensemble Monte Carlo Simulation

IEEE Transactions on Electron Devices

Volumn 36, Issue 7, 1989, Pages 1254-1263

  Park, Duke H ^a   Brennan, Kevin F ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL STATISTICS--MONTE CARLO METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS--APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE--APPLICATIONS;

CURRENT VOLTAGE CHARACTERISTIC; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); NONSTATIONARY TRANSPORT EFFECTS; TWO DIMENSIONAL ELECTRIC FIELD PROFILE; VELOCITY OVERSHOOT;

TRANSISTORS;

EID: 0024705152     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.30930     Document Type: Article

References (58)

1. P. Saunier and J. W. Lee, “High efficiency millimeter wave GaAs/AlGaAs power HEMT's,” IEEE Electron Device Lett., vol. EDL-7, pp. 503-505, Sept. 1986.
2. Y. M. Kim and P. Roblin, “Two-dimensional charge-control model for MODFET's,” IEEE Trans. Electron Devices, vol. ED-33, pp. 1644-1651, Nov. 1986.
3. D. Delagebeaudeuf and N. T. Linh, “Metal-(n) AIGaAs-GaAs two-dimensional electron gas FET,” IEEE Trans. Electron Devices, vol. ED-29, pp. 955-960, June 1982.
4. T. J. Drummond, H. Morkoç, K. Lee, and M. Shur, “Model for modulation-doped field effect transistor,” IEEE Electron Device Lett., vol. EDL-3, pp. 338-341, Nov. 1982.
5. K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoç, “Current-voltage and capacitance-voltage characteristic of modulation-doped field-effect transistors,” IEEE Trans. Electron Devices, vol. ED-30, pp. 207-212, Mar. 1983.
6. K. Lee, M. Shur, T. J. Drummond, and H. Morkoç, “Electron density of the two-dimensional electron gas in modulation doped layers,” J. Appl. Phys., vol. 54, pp. 2093-2096, Apr. 1983.
7. M. B. Das and M. L. Roszak, “Design calculations for submicron gate-length AlGaAs/GaAs modulation-doped FET structures using carrier saturation velocity/charge-control model,” Solid-State Electron., vol. 28, pp. 997-1005, 1985.
8. M. L. Majewski, “An analytical DC model for the modulation-doped field-effect transistor,” IEEE Trans. Electron Devices, vol. ED-34, pp. 1902-1910, Sept. 1987.
9. M. B. Das, “Millimeter-wave performance of ultrasub micrometer-gate field-effect transistors: A comparison of MODFET, MESFET, and PBT structures,” IEEE Trans. Electron Devices, vol. ED-34, pp. 1429-1440, July 1987.
10. T. J. Drummond, W. T. Masselink, and H. Morkoç, “modulation-doped GaAs/AlGaAs heterojunction field-effect transistors: MODFET's,” Proc. IEEE, vol. 74, pp. 773-822, June 1986.
11. T. Mimura, S. Hiyamizu, T. Fujii, and K. Nanbu, “A new field-effect transistor with selectively doped GaAs/n-AlGaAs heterojunctions,” Japan. J. Appl. Phys., vol. 19, pp. L225-L227, May 1980.
12. D. Delagebeaudeuf et al., “Two-dimensional electron gas MESFET structure,” Electron Lett., vol. 16, pp. 667-668, Aug. 1980.
13. U. K. Mishra, S. C. Palmateer, P. C. Chas, P. M. Smith, and J. C. Hwang, “Microwave performance of 0.25 μm gate length high electron mobility transistors,” IEEE Electron Device Lett., vol. EDL-6, pp. 142-145, Mar. 1985.
14. S. Pei, N. Shah, R. Hendel, C. Tu, and R. Dingle, “Ultra high speed integrated circuits with selectively doped heterostructure transistors,” in Tech. Dig. IEEE GaAs Integrated Circuit Symp. (Boston, MA), Oct. 1984.
15. H. L. Störmer, R. Dingle, A. C. Gossard, W. Wiegmann, and M. D. Sturge, “Two-dimensional electron gas at a semiconductor-semiconductor interface,” Solid State Commun., vol. 29, pp. 705-709, 1979.
16. M.I. Nathan, “Persistent conductivity in AlGaAs/GaAs modulation doped layers and field effect transistors: A review,” Solid-State Electron., vol. 29, no. 2, pp. 167-172, 1986.
17. A. J. Valois, G. Y. Robinson, K. Lee, and M. S. Shur, “Temperature dependence of the I-V characteristics of modulation-doped FETs,” J. Vac. Sci. Technol. B, vol. 1, pp. 190-195, Apr.-June 1983.
18. R. Fischer et al., “On the collapse of drain I/V characteristics in modulation-doped FET's at cryogenic temperatures,” IEEE Trans. Electron Devices, vol. ED-31, pp. 1028-1032, 1984.
19. S. J. Liu et al., “Low-noise behavior of InGaAs quantum-well structured modulation-doped FET's from 10-2 to 108 Hz,” IEEE Trans. Electron Devices, vol. ED-33, pp. 576-582, May 1986.
20. S. Dhar, W. P. Hong, P. K. Bhattacharya, Y. Nashimoto, and F. Y. Juang, “A detailed investigation of the D-X center and other trap levels in GaAs-AlGaAs modulation doped heterostructures grown by molecular-beam epitaxy,” IEEE Trans. Electron Devices, vol. ED-33, pp. 698-706, May 1986.
21. S. Subramanian, A. S. Vengurlekar, and A. A. Diwan, “Effect of shallow and deep donors on the equilibrium electron density of the two-dimensional electron gas in a modulation doped field-effect transistor,” IEEE Trans. Electron Devices, vol. ED-33, pp. 707-711, May 1986.
22. A. J. Valois and G. Y. Robinson, “Characterization of deep levels in modulation-doped AlGaAs/GaAs FET's,” IEEE Electron Device Lett., vol. EDL-4, pp. 360-362, Oct. 1983.
23. M. Mizata, M. Tachikawa, H. Kukimoto, and S. Minomura, “Direct evidence for the DX center being a substitutional donor in AlGaAs alloy system,” Japan. J. Appl. Phys., vol. 24, p. L143, 1985.
24. K. Hess, H. Morkoç, H. Shichijo, and B. G. Streetman, “Negative differential resistance through real space electron transfer,” Appl. Phys. Lett., vol. 35, pp. 469-471, 1979.
25. K. F. Brennan and D. H. Park, “Theoretical comparison of electron real space transfer in classical and quantum two-dimensional heterostructures systems,” J. Appl. Phys., vol. 65, pp. 1156-1163, 1989.
26. J. J. Rosenberg, M. Benlamri, P. D. Kirchner, J. M. Woodall, and G. D. Pettit, “An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT,” IEEE Electron Device Lett., vol. EDL-6, pp. 491-493, Oct. 1985.
27. W. T. Masselink, A. Ketterson, J. Klem, W. Kopp, and H. Morkoç, “Cryogenic operation of pseudomorphic AlGaAs/InGaAs single-quantum-well MODFETs,” Electron. Lett., vol. 21, pp. 937-939, 1985.
28. A. Ketterson et al., “High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors,” IEEE Electron Device Lett., vol. EDL-6, pp. 628-630, Dec. 1985.
29. L. D. Nguyen, D. C. Radulescu, P. J. Tasker, W. J. Schaff, and L. F. Eastman, “0.2 μm gate-length atomic-planar doped pseudomorphic Al0.3Ga0.7As/In0.25Ga0.75As MODFET's with f, over 120 GHz,” IEEE Electron Device Lett., vol. 9, pp. 374-376, Aug. 1988.
30. Y. K. Chen, D. C. Radulescu, G. W. Wang, F. E. Najjar, and L. F. Eastman, “Observation of high-frequency high-field instability in GaAs/InGaAs/AlGaAs DH-MODFET's at K band,” IEEE Electron Device Lett., vol. EDL-9, pp. 1-3, Jan. 1988.
31. G. W. Wang, Y. K. Chen, D. C. Radulescu, and L. F. Eastman, “A high-current pseudomorphic AlGaAs/InGaAs double quantum-well MODFET,” IEEE Electron Device Lett., vol. 9, pp. 4-6, Jan. 1988.
32. R. R. Daniels et al., “quantum-well p-channel AlGaAs/ InGaAs/GaAs heterostructure insulated-gate field effect transistors with very high transconductance,” IEEE Electron Device Lett., vol. 9, pp. 355-357, July 1988.
33. L. D. Nguyen et al., “Charge control, DC, and RF performance of a 0.35 μm pseudomorphic AlGaAs/InGaAs modulation doped field-effect transistor,” IEEE Trans. Electron Devices, vol. 35, pp. 139-144, Feb. 1988.
34. S. M. Liu, M. B. Das, W. Kopp, and H. Morkoç, “Noise behavior of 1 μm gate length modulation-doped FET's,” IEEE Electron Device Lett., vol. EDL-6, pp. 453-455, Sept. 1985.
35. D. H. Park and K. F. Brennan, “Theory of electronic transport in two-dimensional Ga0.85In0.15As/Al0.15Ga0.85As pseudomorphic structures,” J. Appl. Phys., vol. 65, pp. 1615-1620, 1989.
36. W. A. Hughes and C. M. Snowden, “Nonlinear charge control in AlGaAs/GaAs modulation-doped FET's,” IEEE Trans. Electron Devices, vol. ED-34, pp. 1617-1625, Aug. 1987.
37. K. Park and K. D. Kwack, “A model for the current-voltage characteristics of MODFET's,” IEEE Trans. Electron Devices, vol. ED-33, pp. 673-676, May 1986.
38. G. W. Wang and W. H. Ku, “Analytical and computer-aided model of AlGaAs/GaAs high electron mobility transistors,” IEEE Trans. Electron Devices, vol. ED-33, pp. 657-663, May 1986.
39. D. Widiger, I. C. Kizilyalli, K. Hess, and J. J. Coleman, “Two-dimensional transient simulation of an idealized high electron mobility transistor,” IEEE Trans. Electron Devices, vol. ED-32, pp. 1092-1102, June 1985.
40. J. Zimmerman, Y. Wu, and F. Perri, “Study of two-dimensional gas transport properties: An approach to electron transport in TEGFETs,” Physica, vol. 129B, pp. 385-389, 1985.
41. J. Y. F. Tang, “Two-dimensional simulation of MODFET and GaAs gate heterojunction FET's,” IEEE Trans. Electron Devices, vol. ED-32, pp. 1817-1823, Sept. 1985.
42. J. Yoshida and M. Kurata, “Analysis of high electron mobility transistors based on a two-dimensional numerical model,” IEEE Electron Device Lett., vol. EDL-5, pp. 508-510, Dec. 1984.
43. U. Ravaioli and D. K. Ferry, “MODFET ensemble Monte Carlo model including the quasi-two-dimensional electron gas,” IEEE Trans. Electron Devices, vol. ED-33, pp. 677-681, May 1986.
44. M. Tomizawa, A. Yoshi, and K. Yokoyama, “Modeling for an AlGaAs/GaAs heterostructures device using Monte Carlo simulation,” IEEE Electron Device Lett., vol. EDL-6, pp. 332-334, July 1985.
45. T. Wang and K. Hess, “Calculation of the electron velocity distribution in high electron mobility transistors using an ensemble Monte Carlo method,” J. Appl. Phys., vol. 57, pp. 5336-5339, June 1985.
46. K. Yokoyama and K. Hess, “Calculation of warm electron transport in AlGaAs/GaAs single heterostructures using a Monte Carlo method,” J. Appl. Phys., vol. 59, pp. 3798-3802, June 1986.
47. “Monte Carlo study of electronic transport in AlGaAs/GaAs single-well heterostructures,” Phys. Rev. B., vol. 33, pp. 5595-5606, Apr. 1986.
48. Y. Awano, M. Kosugi, T. Mimura, and M. Abe, “Performance of a quarter-micrometer-gate ballistic electron HEMT,” IEEE Electron Device Lett., vol. EDL-8, pp. 451-453, Oct. 1987.
49. K. Tomizawa and N. Hashizume, “Ensemble Monte Carlo simulation of an AlGaAs/GaAs heterostructure Mis-like FET,” IEEE Trans. Electron Devices, vol. 35, pp. 849-856, July 1988.
50. R. W. Hockney and J. W. Eastwood, Computer Simulation Using Particles. New York, McGraw-Hill, 1981, p. 142.
51. J. Jeong, T. Schlesinger, and A. G. Milnes, “Consideration of discrete interface traps in InGaAs/GaAs heterojunctions,” IEEE Trans. Electron Devices, vol. ED-34, pp. 1911-1918, Sept. 1987.
52. F. Stern and S. Das Sarma, “Electron energy levels in GaAs-Ga1-xAlxAs heterojunction,” Phys. Rev. B, vol. 30, pp. 840-848, July 1984.
53. E. Yamaguchi, “Theory of defect scattering in two-dimensional multisubband electronic systems on III-V compound semiconductors,” J. Appl. Phys., vol. 56, pp. 1722-1727, 1984.
54. K. Brennan and K. Hess, “High field transport in InGaAs, InP, and InAs,” Solid-State Electron., vol. 27, pp. 347-358, 1984.
55. S. Adachi, “GaAs, AlAs, and AlxGa1-xAs: Material parameters for use in research and device applications,” J. Appl. Phys., vol. 58, pp. R1-R29, 1985.
56. K. F. Brennan, D. H. Park, K. Hess, and M. A. Littlejohn, “Theory of the velocity-field relation in AlGaAs,” J. Appl. Phys., vol. 63, pp. 5004-5008, May 1988.
57. K. F. Brennan, Y. Wang, M. C. Teich, B. E. A. Saleh, and T. Khor-sandi, “Theory of the temporal response of a simple multiquantum well avalanche photodiode,” IEEE Trans. Electron Devices, vol. 35, pp. 1456-1467, Sept. 1988.
58. K. F. Brennan, “Theoretical studies of high energy transport of electrons and holes in gallium arsenide, indium phosphide, indium arsenide, and gallium antimonide,” Ph.D. dissertation, Univ. of Illinois, Urbana, 1984.