High-quality InxGa1-xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substrates

Journal of Crystal Growth

Volumn 111, Issue 1-4, 1991, Pages 313-317

  Inoue, K ^a   Harmand, J C ^a   Matsuno, T ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICES - HETEROJUNCTIONS; TRANSISTORS, FIELD EFFECT;

MODULATION DOPING;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0026413168     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(91)90992-E     Document Type: Article

References (6)

1. Lattice-Mismatched Growth and Transport Properties of InAlAs/InGaAs Heterostructures on GaAs Substrates
2. Proc. 16th Intern. Symp. on GaAs and Related Compounds