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European Transactions on Telecommunications
Volumn 1, Issue 4, 1990, Pages 429-432
Modelling of pseudomorphic AlGaAs/GaInAs/AlGaAs layers using selfconsistent approach
Author keywords

[No Author keywords available]
Indexed keywords

EID: 84985848205     PISSN: 1124318X     EISSN: 15418251     Source Type: Journal    
DOI: 10.1002/ett.4460010410     Document Type: Article
Times cited : (9)
References (7)
  • 1
    • 84985833728 scopus 로고
    • InGaAs pseudomorphic HEMTS for millimeter‐wave power application. IEEE MTT.S digest
    • (1988) , pp. 927
    • Smith, P.M.1
  • 3
    • 0001156050 scopus 로고
    • Self‐consistent results for n‐type Si inversion layers
    • (1972) Phys. Rev. B , vol.5 , Issue.12 , pp. 4891-4899
    • Stern, F.1
  • 4
    • 0342477904 scopus 로고
    • Optical investigation of a new type of valence band configuration in In, Ga, ‐ As‐GaAs strained superlattices
    • (1985) Phys. Rev. B , vol.31 , Issue.12 , pp. 8298-8301
    • Marzin, J.Y.1
  • 5
    • 36549104958 scopus 로고
    • Effect of mismatch strain on bandgap in III‐V semiconductors
    • (1985) J. Appl. Phys. , vol.57 , Issue.12 , pp. 5428-5432
    • Kuo, C.P.1
  • 7
    • 0014835083 scopus 로고
    • Accomodation of Misfit Across the interface between crysrak of semiconducting elements or compounds
    • (1970) J. Appl. Phys. , vol.41 , Issue.9 , pp. 3800-3804
    • Matthews, J.W.1

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.