Application of the small-signal transmission line equivalent circuit model to the a.c., d.c. and transient analysis of semiconductor devices

Solid State Electronics

Volumn 17, Issue 9, 1974, Pages 941-949

  Green, M A ^a   Shewchun, J ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES;

EID: 0016102630     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(74)90046-X     Document Type: Article

References (22)

1. A self-consistent iterative scheme for one-dimensional steady state transistor calculations
2. The Analysis of Radiation Effects in Semiconductor Junction Devices
3. Computerized Model for Response of Transistors to a Pulse of Ionizing Radiation
4. Numerical solutions for a one-dimensional silicon n-p-n transistor
5. Unified modeling scheme for semiconductor devices with applications of state-variable analysis
6. Frequency Variations of Junction-Transistor Parameters
7. A nonlinear lumped network model of semiconductor devices with consideration of recombination kinetics
8. The equivalent circuit model in solid-state electronics—Part I: The single energy level defect centers
9. Equivalent circuit models in semiconductor transport for thermal, optical, auger-impact, and tunnelling recombination–generation–trapping processes
10. Carrier mobilities in silicon empirically related to doping and field
11. The capacitance of abrupt p-n junction diodes under forward bias
12. The Evolution of the Theory for the Voltage-Current Characteristic of P-N Junctions
13. Switching Time in Junction Diodes and Junction Transistors