First high performance InAlAs/InGaAs HEMTs on GaAs exceeding that on InP

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 891-894

  Higuchi, Katsuhiko ^a   Kudo, Makoto ^a   Mori, Mitsuhiro ^a   Mishima, Tomoyoshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; GATES (TRANSISTOR); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; TRANSCONDUCTANCE;

INDIUM ALUMINUM ARSENIDE; INDIUM GALLIUM ARSENIDE; LATTICE MISMATCH;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0028744680     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)