Characterization of Surface-Undoped In0.52Al0.48As/ In0.53Ga0.47As/InP High Electron Mobility Transistors

IEEE Transactions on Electron Devices

Volumn 37, Issue 10, 1990, Pages 2165-2170

  Pao, Yi Ching ^a   Nishimoto, Clifford K ^a   Majidi Ahy, Reza ^a   Archer, John ^a   Bechtel, N George ^a   Harris, James S ^b  

^a Varian Inc   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MILLIMETER WAVES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; WAVEGUIDES;

COPLANAR WAVEGUIDES;

TRANSISTORS, HIGH ELECTRON MOBILITY;

EID: 0025507344     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.59905     Document Type: Article

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