Monolithic W-band three-stage LNA using 0.1 μm InAlAs/InGaAs/InP HEMT technology

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1993, Pages 519-522

  Wang, H ^a   Lai, R ^a   Chen, T H ^a   Chow, P D ^a   Velebir, J ^a   Tan, K L ^a   Streit, D C ^a   Liu, P H ^a   Ponchak, G ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; MILLIMETER WAVES; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SPURIOUS SIGNAL NOISE;

LOW NOISE AMPLIFIERS; MONOLITHIC W-BAND LOW NOISE AMPLIFIERS; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS;

AMPLIFIERS (ELECTRONIC);

EID: 0027187302     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)