Threshold and Sheet Concentration Sensitivity of High Electron Mobility Transistors

IEEE Transactions on Electron Devices

Volumn 31, Issue 7, 1984, Pages 879-888

  Tiwari, Sandip ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS - APPLICATIONS;

HEMTS; HIGH ELECTRON MOBILITY TRANSISTORS; SHEET CARRIER CONCENTRATION; THRESHOLD VOLTAGE;

TRANSISTORS;

EID: 0021452467     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1984.21625     Document Type: Article

References (12)

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