Quasi-two-dimensional modeling of gaas mesfet’s

IEEE Transactions on Electron Devices

Volumn 34, Issue 5, 1987, Pages 985-991

  Sandborn, Peter A ^a   East, Jack R ^a   Haddad, George I ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE; TRANSISTORS, FIELD EFFECT - TRANSPORT PROPERTIES;

CURRENT-CONTINUITY EQUATION; ELECTRON-TEMPERATURE EQUATION; NUMERICAL SIMULATION; POISSON'S EQUATION; QUASI-TWO-DIMENSIONAL MODELING;

SEMICONDUCTOR DEVICES, FIELD EFFECT;

EID: 0023346399     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.23034     Document Type: Article

References (14)

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