High-performance, 0.1 μm InAlAs/InGaAs high electron mobility transistors on GaAs

IEEE Electron Device Letters

Volumn 17, Issue 7, 1996, Pages 328-330

  Gill, David M ^a,b   Kane, B C ^a,c   Svensson, Stefan P ^a,d,f   Tu, D W ^a,d,f   Uppal, P N ^a,e,f   Byer, N E ^a,e,f  

^a LOCKHEED MARTIN   (United States)

^b NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^c AT and T Microelectronics   (United States)

^d U S ARMY RESEARCH LABORATORY   (United States)

^e BAE SYSTEMS   (United States)

^f IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARACTERIZATION; ELECTRON TRANSPORT PROPERTIES; EQUIPMENT TESTING; OHMIC CONTACTS; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

ELECTRON MOBILITY; HIGH FREQUENCY TESTING; NONPLANAR MESA ISOLATION TECHNIQUE; UNITY CURRENT GAIN FREQUENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030182733     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.506357     Document Type: Article

References (4)

1. P. M. Smith, "InP-based HEMT's for microwave and millimeter-wave applications," in Proc. Int. Conf. InP Related Materials, Sapporo, Japan, May 10, 1995.
2. D. M. Gill, P. N. Uppal, and S. P. Svensson, J. Vac. Sci. Technol., to be published.
3. W. A. Beck and J. R. Anderson, "Determination of electrical transport properties using a novel magnetic field-dependent Hall technique," J. Appl. Phys., vol. 62, p. 541, 1987.
4. A. Eskandarian and S. Weinreb, "A note on experimental determination of small-signal equivalent circuit of millimeter-wave FET's," IEEE Trans. Microwave Theory Tech., vol. 41, no. 1, p. 159, 1993.