In0.52Al0.48As/InxGa1-xAs (0.53 < X < 1.0) pseudomorphic high electron mobility transistors with high breakdown voltages: Design and performances

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 1 A, 1996, Pages 10-15

  Dickmann, Jürgen ^a   Riepe, Klaus ^a   Geyer, Arthur ^a   Maile, Bernd E ^a   Schurr, Anton ^a   Berg, Michael ^a   Daembkes, Heinrich ^a  

^a DAIMLER AG   (Germany)

Author keywords

Heterojunction FET; Microwave devices; Molecular beam epitaxy; Pseudomorphic HFET

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; HETEROJUNCTIONS; MICROWAVE DEVICES; MOLECULAR BEAM EPITAXY; PERFORMANCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

DEVICE PERFORMANCE; HETEROJUNCTION FIELD EFFECT TRANSISTORS; INDIUM ARSENIDE MOLE FRACTION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029756421     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.35.10     Document Type: Article

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