Theoretical Study of Multiquantum Well Avalanche Photodiodes made from the GalnAs/AlInAs Material System

IEEE Transactions on Electron Devices

Volumn 33, Issue 10, 1986, Pages 1502-1510

  Brennan, Kevin ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84949083234     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1986.22700     Document Type: Article

References (40)

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