Modeling of a submicrometer gate field-effect transistor including effects of nonstationary electron dynamics

Journal of Applied Physics

Volumn 51, Issue 1, 1980, Pages 784-790

  Carnez, B ^a   Cappy, A ^a   Kaszynski, A ^a   Constant, E ^a   Salmer, G ^a  

^a UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0018879033     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.327292     Document Type: Article

References (16)