A D-Band Monolithic Fundamental Oscillator Using InP-Based HEMT’s

IEEE Transactions on Microwave Theory and Techniques

Volumn 41, Issue 12, 1993, Pages 2336-2344

  Kwon, Youngwoo ^a   Streit, Dwight C ^b   Brock, Timothy L ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT OSCILLATIONS; ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK TOPOLOGY; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MICROWAVE DEVICES; MICROWAVE MEASUREMENT; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; WAVEGUIDES;

D-BAND MONOLITHIC FUNDAMENTAL OSCILLATOR; DOUBLE HETEROJUNCTION; FEEDBACK TOPOLOGY; HIGH FREQUENCY EFFECT; LARGE SIGNAL METHOD; MONOLITHIC CHIPS; OSCILLATION FREQUENCY; SIGNAL GENERATION; SMALL SIGNAL METHOD;

MICROWAVE OSCILLATORS;

EID: 0027858034     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.260726     Document Type: Article

References (18)

1. P. Ho, M. Y. Kao, P. C. Chao, K. H. G. Duh, J. M. Ballingall, S. T. Allen, A. J. Tessmer, and P. M. Smith, “Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTs,” IEE Electron Lett., vol. 27, pp. 325–327, 1990.
2. L. D. Nguyen, A. S. Brown, M. A. Thompson, and L. M. Jelloian, “50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors,” IEEE Trans. Electron Devices, vol. 39, pp. 2007–2014, Sept. 1992.
3. Y. Kwon, D. Pavlidis, T. Brock, G. I. Ng, K. L. Tan, J. R. Velebir, and D. C. Streit, “Submicron pseudomorphic double heterojunction InAlAs/In0.7Ga0.3As/inAlAs HEMT’s with high cut-off and current-drive capability,” in Proc. 5th Conf InP Rel. Mater., Apr. 1993, pp. 465–468.
4. H. Q. Tserng and B. Kim, “A 115 GHz monolithic GaAs FET oscillator,” in Tech. Dig. 1985 IEEE GaAs IC Symp., Nov. 1985, pp. 11–13.
5. H. Wang, K. Chang, T. Chen, K. Tan, G. Dow, B. Allen, and J. Berenz, “Monolithic W-band VCO’s using pseudomorphic Al-GaAs/InGaAs HEMTs,” in Tech. Dig. 1992 IEEE GaAs IC Symp., Oct. 1992, pp. 47–50.
6. R. Majidi-ahy, C. K. Nishimoto, M. Riaziat, M. Glenn, S. Silverman, S. L. Weng, Y. C. Pao, G. A. Zdasiuk, S. G. Bandy, and
7. Z. C. H. Tan, “5-100 GHz InP coplanar waveguide MMIC distributed amplifier,” IEEE Trans. Microwave Theory Tech., vol. MTT38, pp. 1990–1993, Dec. 1990.
8. Y. Kwon, D. Pavlidis, P. Marsh, G. I. Ng, and T. Brock, “Experimental characteristics and performance analysis of monolithic InP-based HEMT mixers at W-band,” IEEE Trans. Microwave Theory Tech., vol. MTT-41. pp. 1–8, Jan. 1993.
9. Y. Kwon, G. Ng, D. Pavlidis, R. Lai, T. Brock, J. Castagné, and N. Linh, “High efficiency monolithic Ka-band oscillators using InAlAs/InGaAs HEMT’s,” in Tech. Dig. of 1991 IEEE GaAs IC Symp., Oct. 1991, pp. 263–266.
10. Y. Kwon and D. Pavlidis, “Large signal analysis and experimental characteristics of monolithic InP-based W-band HEMT oscillators,” in Proc. 21st Euro. Microwave Conf., Sept. 1991, pp. 161–166.
11. Y. Kwon, D. Pavlidis, P. Marsh, G. Ng, T. Brock, G. Munns, and G. Haddad, “A fully integrated monolithic D-band oscillator-doubler chain using InP-based HEMT’s,” in Tech. Dig. 1992 IEEE GaAs IC Symp., Oct. 1992, pp. 51–54.
12. M. Berroth and R. Bosch, “High-frequency equivalent circuit of GaAs FET’s for large-signal applications,” IEEE Trans. Microwave Theory Tech., vol. MTT-39, pp. 224–229, Feb. 1991.
13. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, “A new method for determining the FET small-signal equivalent circuit,” IEEE Trans. Microwave Theory Tech., vol. MTT-36, pp. 1151–1159, July 1988.
14. Y. Kwon, D. Pavlidis, and M. N. Tutt, “An evaluation of HEMT potential for millimeter-wave signal sources using interpolation and harmonic balance techniques,” IEEE Microwave Guided Wave Lett., vol. 1, pp. 365–367, Dec. 1991.
15. K. Kurokawa, “Some basic characteristics of broadband negative resistance oscillator circuits,” Bell Syst. Tech. J., vol. 48, pp. 1937-1955. July 1969.
16. C. Rauscher and H. A. Willing, “Simulation of nonlinear microwave FET performance using a quasistatic model,” IEEE Trans. Microwave Theory Tech., vol. MTT-27, pp. 834–840, Oct. 1979.
17. I. Corbella, J. M. Legido, and G. Naval, “Instantaneous model of a MESFET for use in linear and nonlinear circuit simulations,” IEEE Trans. Microwave Theory Tech., vol. MTT-40, pp. 1410–1421, July 1992.
18. M. Maeda, K. Kimura, and H. Kodera, “Design and performance of X-band oscillator with GaAs Schottky-gate field-effect transistor,” IEEE Trans. Microwave Theory Tech., vol. MTT-23, pp. 661–667, Aug. 1975.