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Applied Physics Letters

Volumn 61, Issue 8, 1992, Pages 922-924

Metamorphic In0.3Ga0.7As/In0.29Al 0.71As layer on GaAs: A new structure for high performance high electron mobility transistor realization

(6) Win, P a Druelle, Y a Cappy, A a Cordier, Y b Favre, J b Bouillet, C c

a INSTITUT D ELECTRONIQUE (France)

b Domaine de Corbeville ^* (France)

c UNIV LILLE (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 11644264435 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.107729 Document Type: Article

Times cited : (33)

References (11)

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2
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3
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- (1988) IEEE Electron Device Lett. , vol.9 , pp. 647
- Mishra, U.K.¹ Brown, A.S.² Rosenbaum, S.E.³ Hooper, C.E.⁴ Pierce, M.W.⁵ Delaney, M.J.⁶ Vaughn, S.⁷ White, K.⁸

4
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- (1990) IEEE Electron Device Lett. , vol.11 , pp. 59
- Chao, P.-C.¹ Tessmer, A.J.² Duh, K.H.G.³ Ho, P.⁴ Kao, M.Y.⁵ Smith, P.M.⁶ Ballingall, J.M.⁷ Liu, S.-M.J.⁸ Jabra, A.A.⁹

5
- 36549091551
- (1990) Appl. Phys. Lett. , vol.56 , pp. 346
- Thobel, J.L.¹

6
- 0024883230
- (1989) IEEE MTT-S Dig. , pp. 805
- Duh, K.H.G.¹ Chao, P.C.² Ho, P.³ Kao, M.Y.⁴ Smith, P.M.⁵ Ballingall, J.M.⁶ Jabra, A.A.⁷

7
- 84970077913
- XV, Phoenix, AZ
- (1992) Proceedings of the State Of The Art Program On Compound Semiconductors , pp. 100
- Win, P.¹ Cordier, Y.² Druelle, Y.³ Cappy, A.⁴

8
- 0024133706
- (1988) Thin Solid Films , vol.166 , pp. 155
- Chu, P.¹ Lin, C.L.² Wider, H.H.³

9
- 0042658554
- (1990) J. Vac. Sci. Technol. B , vol.8 , pp. 301
- Grider, D.E.¹ Swirhun, S.E.² Narum, D.H.³ Akinwande, A.I.⁴ Nohava, T.E.⁵ Stuart, W.R.⁶ Joslyn, P.⁷

10
- 84950575301
- (1989) Jpn. J. Appl. Phys. , vol.28 , pp. L-1101
- Harmand, J.C.¹ Matsuno, T.² Inoue, K.³

11
- 0005984755
- (1975) J. Cryst. Growth , vol.31 , pp. 223
- Olsen, G.H.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.