Microwave performance of 0.4 µm gate metamorphic In0.29Al0.71As/In0.3/Ga0.7/As HEMT on GaAs substrate

Electronics Letters

Volumn 29, Issue 2, 1993, Pages 169-170

  Win, P ^a   Druelle, Y ^a   Legry, P ^a   Lepilliet, S ^a   Cappy, A ^a   Cordier, Y ^b   Favre, J ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b Thomson LCR   (France)

Author keywords

Semiconductor devices and materials; Transistors

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE DEVICES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

GALLIUM ARSENIDE; MBE GROWN HEMT; METAMORPHIC HEMT; TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

EID: 0027230665     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19930114     Document Type: Article

References (4)

1. NGUYEN, L. D., LARSON, L. E., and MISHRA, U. K.: ‘Ultra-high-speed modulation-doped field-effect transistor: a tutorial review’, Proc. IEEE., 1992,80, pp. 494-518
2. GRIDER, D. E., SWIRHUN, D. H., AKINWANDE, A. I., NOHAVA, T. E., STUART, W. R., JOSLYN, P., and HSIEH, K. G.: ‘Metamorphic InyGa1-yj.As/InxAl-xAs heterostructure field effect transistors grown on GaAs (001) substrates using molecular-beam epitaxy’, J. Vac. Sci. Technol. B, 1990, 8, pp. 301-304
3. WIN, P., DRUELLE, Y., CAPPY, A., CORDIER, Y., FAVRE, J., and BOUILLET, G.: ‘Metamorphic In025AlO75As/In0.27As HEMT on GaAs: MBE growth and device performance’. Proc. 22nd European Solid State Device Research Conf., Leuven, 1992, pp. 317-320
4. WIN, P., DRUELLE, Y., CAPPY, A., CORDIER, Y., FAVRE, J., and BOUILLET, G.: ‘Metamorphic Ino.29Alo.71As/Ino.3Gao.7As layer on GaAs, a new structure for high performance high electron mobility transistor’, Appl. Phys. Lett., 1992,61, pp. 922-924