A Quasi-Two-Dimensional HEMT Model for Microwave CAD Applications

IEEE Transactions on Electron Devices

Volumn 42, Issue 6, 1995, Pages 1026-1032

  Drury, Robert ^a   Snowden, Christopher M ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000294246     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.387233     Document Type: Article

References (11)

1. T. Shawki, G. Salmer, and O. El-Sayed, “MODFET 2-D hydrodynamic energy modeling: Optimization of subquarter-micron-gate structures,” IEEE Trans. Electron Devices, vol. 37, no. 1, pp. 21–29, Jan. 1990.
2. K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoç“Parasitic MESFET in (Al,Ga) AsJGaAs modulation doped PET's and MODFET characterisation,” IEEE Trans. Electron Devices, vol. ED-31, no. 1, pp. 29–35, Jan. 1984.
3. C. M. Snowden and R. R. Pantoja, “Quasi-two-dimensional MESFET simulations for CAD,” IEEE Trans. Electron Devices, vol. 36, no. 9, pp. 1564–1574, Sept. 1989.
4. R. R. Pantoja, M. J. Howes, J. R. Richardson, and C. M. Snowden. “A large-signal physical MESFET model for computer-aided design and its applications,” IEEE Trans. Microwave Theory Technol. vol. 37, no. 12, pp. 2039–2045, Dec. 1989.
5. B. Carnez, A. Cappy, A. Kaszynski, E. Constant, and G. Salmer, “Modeling of a subrnicrometer gate field effect transistor including the effects of nonstationary electron dynamics,” J. Appl. Phys., vol. 51, no. 1, pp. 784–790, Jan. 1980.
6. C. M. Snowden and R. R. Pantoja, “GaAs MESFET physical models for process-oriented design,” IEEE Trans. Microwave Theory Technol., vol. 40, no. 7, pp. 1401-1409, July 1992.
7. B. Carnez, A. Cappy, R. Fauquembergue, E. Constant, and G. Salmer, “Noise modeling in submicrometer-gate FET’s,” IEEE Trans. Electron Devices, vol. ED-28, no. 7, pp. 784–789, July 1981.
8. A. Cappy, A. Vanoverschelde, M. Schortgen, C. Versnaeyen, and G. Salmer, “Noise modeling in subrnicrometer gate two-dimensional electron-gas field-effect transistors,” IEEE Trans. Electron Devices, vol. ED-32, no. 12, pp. 2787–2795, Dec. 1985.
9. H. Happy, G. Dambrine, J. Alamkan, F. Danneville, F. Kaptche-Tagne, and A. Cappy, “HELENA: A friendly software for calculating the dc, ac and noise performance of HEMT’s,” Int. J. Microwave and Millimeter-Wave Computer-Aided Engineering, vol. 3, no. 1, pp. 14–28, Jan. 1993.
10. J. H. Wilkinson, The Algebraic Eigenvalue Problem. New York: Springer-Verlag, 1971. p. 300.
11. J. Stoer and R. Burlish, Introduction to Numerical Analysis. New York: Springer-Verlag, 1980, p. 385.