A Two-Dimensional Numerical FET Model for DC, AC, and Large-Signal Analysis

IEEE Transactions on Electron Devices

Volumn 20, Issue 1, 1973, Pages 35-45

  Reiser, Martin ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0015561910     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1973.17606     Document Type: Article

References (39)

1. W. Shockley, “A unipolar ‘field-effect’ transistor,” Proc. IRE, vol. 40, pp. 1365-1376, Nov. 1952.
2. H. K. Gummel, “A self-consistent iterative scheme for one-dimensional steady state transistor calculations,” IEEE Trans. Electron Devices, vol. ED-11, pp. 455–465, Oct. 1964.
3. A. De Mari, “An accurate numerical one-dimensional solution of the p-n junction under arbitrary transient conditions,” Solid-State Electron., vol. 11, pp. 1021–1053, Nov. 1968.
4. ――, “An accurate numerical steady state one-dimensional solution of the p-n junction,” Solid-State Electron., vol. 11, pp. 33-58, Jan. 1968.
5. E. Wasserstrom and J. McKenna, “The potential due to a charged metallic strip on a semiconductor surface,” Bell Syst. Tech. J., vol. 49, pp. 853-877, May 1970.
6. J. A. Lewis, “The flat plate problem for a semiconductor,” Bell Syst. Tech. J., vol. 49, pp. 1484–1490, Sept. 1970.
7. H. W. Loeb, R. Andrew, and W. Love, “Application of two-dimensional solutions of the Shockley-Poisson equation to inversion-layer MOST devices,” Electron. Lett., vol. 4, pp. 352–354, Aug. 1969.
8. P. Dubock, “Numerical analysis of forward and reverse bias potential distribution in a two-dimensional p-n junction with applications to capacitance calculations,” Electron. Lett., vol. 5, pp. 236-238, May 1969.
9. J. W. Slotboom, “Iterative scheme for one- and two-dimensional de-transistor simulation,” Electron. Lett., vol. 5, pp. 677–678, Dec. 1969.
10. P. Dubock, ‘'D.C. numerical model for arbitrarily biased bipolar transistors in two dimensions,” Electron. Lett., vol. 6, pp. 53–55, Feb. 1970.
11. C.-K. Kim and E. S. Yang, “An analysis of current saturation mechanism of junction field-effect transistors,” IEEE Trans. Electron Devices, vol. ED-17, pp. 120–127, Feb. 1970.
12. M. Heydemann, “Méthode numérique d'étude des structures M.O.S.T.,” Electron. Lett., vol. 6. pp. 735-737, May 1971.
13. D. Vandorpe and N. H. Xuong, “Mathematical two-dimensional model of semiconductor devices,” Electron. Lett., vol. 7, pp. 47-50, Jan. 1971.
14. J. A. Kilpatrick and W. D. Ryan, “Two-dimensional analysis of lateral-base transistors,” Electron. Lett., vol. 7, pp. 226–227, May 1971.
15. D. P. Kennedy and R. R. O’Brien, “Computer-aided two-dimensional analysis of the junction field-effect transistor,” IBM J. Res. Develop., vol. 14, pp. 95-116, Mar. 1971.
16. ――, “Two-dimensional analysis of J.F.E.T. structure containing a low-conductivity substrate,” Electron. Lett., vol. 7, pp. 714–716, Dec. 1971.
17. M. Reiser, “Two-dimensional analysis of substrate effects in junction F.E.T.s,” Electron. Lett., vol. 6, pp. 493-494, Aug. 1970.
18. ――, “Difference methods for the solution of the time-dependent semiconductor flow equations,” Electron. Lett., vol. 7, pp. 353–355, June 1971.
19. ――, “Zweidimensionale Lösung der instationären Halbleitertransportgleichungen fur Feldeffekt-Transistoren,” Ph.D. dissertation, Swiss Federal Institute of Technology (ETH), Zurich, July 1971.
20. S. Katakoa, H. Tanteno, and M. Kawashima, “Two-dimensional computer analysis of dielectric-surface-loaded GaAs bulk element,” Electron. Lett., vol. 6, pp. 169–171, Mar. 1970.
21. H. Yanai, N. Suzuki, T. Sugeta and M. Tainimoto, “Effect of electrode structure on dipole-domain formation,” in Proc. 3rd Int. Symp. GaAs and Rel. Compounds, 1970, pp. 153–162.
22. W. Bächtold, “Ku-band GaAs FET amplifier and oscillator,” Electron. Lett., vol. 7, pp. 275–276, Oct. 1971.
23. R. Jaggi and H. Weibel, “High-field electron drift velocities and current densities in silicon,” Helv. Phys. Acta, vol. 42, pp. 631–632, Oct. 1969.
24. D. J. Bartelink and G. Persky, “Diffusions of electrons in silicon transverse to a high electric field,” Appl. Phys. Lett., vol. 16, pp. 191-194, Mar. 1970.
25. T. W. Sigmon and J. F. Gibbons, “Diffusivity of electrons and holes in silicon,” Appl. Phys. Lett., vol. 15, pp. 320–322, Nov. 1969.
26. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley-Interscience, 1969.
27. R. D. Richtmeyer and K. W. Marton, Difference Methods for Initial Value Problems. New York: Wiley-Interscience, 1957.
28. J. E. Fromm, “Numerical method for computing nonlinear, time dependent, bouyant circulation of air rooms,” IBM J. Res. Develop., vol. 15, pp. 186-203, May 1971.
29. R. S. Varga, Matrix Iterative Analysis. Englewood Cliffs, N. J.: Prentice-Hall, 1962.
30. R. W. Hockney, “A fast solution of Poisson's equation using Fourier analysis,” J. Ass. Comput. Mach., vol. 12, pp. 95–113, Jan. 1965.
31. ――, “The potential calculation and some applications,” Methods Comp. Phys., vol. 9, pp. 135-211, 1970.
32. M. Reiser, “Large-scale numerical simulation in semiconductor device modelling,” Comput. Methods Appl. Mech. and Eng., vol. 1. pp. 17–39. Apr. 1972.
33. W. Niethammer, “Iterationsverfahren und allgemeine Euler-Verfahren,” Math. Z., vol. 102, pp. 288–317, June 1967.
34. S. Middelhoek, “Projection masking, thin photoresist layers and interference effects,” IBM J. Res. Develop., vol. 14, pp.117-124, Mar. 1970.
35. P. Wolf, “Microwave properties of Schottky-barrier field-effect transistors,” IBM J. Res. Develop., vol. 14, pp. 125–141, Mar. 1970.
36. W. Bächtold and P. Wolf, “An improved microwave silicon MESFET,” Solid-State Electron., vol. 14, pp. 783–790, June 1971.
37. W. Jutzi and M. Reiser, “Threshold voltage of normally off MESFET’s,” IEEE Trans. Electron Devices, vol. ED-19, pp. 314–322, Mar. 1972.
38. M. Caughey, “Simulation of UHF transistor small-signal behavior to 10 GHz for circuit modelling,” in Proc. 2nd Biennial Cornell Elec. Eng. Conf., 1969, IEEE Catalog no. 69 C 65-CORN.
39. W. Fawcett, A. D. Boardman, and S. Swain, “Monte Carlo determination of electron transport properties in gallium arsenide,” J. Phys. Chem. Solids, vol. 31, pp. 1963–1990, July 1970.