Quasi-Two-Dimensional MESFET Simulations for CAD

IEEE Transactions on Electron Devices

Volumn 36, Issue 9, 1989, Pages 1564-1574

  Snowden, Christopher M ^a   Pantoja, Renato R ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER AIDED DESIGN; SEMICONDUCTOR DEVICES--MATHEMATICAL MODELS; SOLIDS--ELECTRIC BREAKDOWN;

AVALANCHE BREAKDOWN; ENERGY CONSERVATION; ENERGY TRANSPORT MODEL; MOMENTUM CONSERVATION; POISSON EQUATION; QUASI-TWO-DIMENSIONAL MESFET SIMULATIONS;

TRANSISTORS, FIELD EFFECT;

EID: 0024737719     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.34213     Document Type: Article

References (27)

1. D. L. Scharfetter and H. K. Gummel, “Large-signal analysis of a silicon Read diode oscillator,” IEEE Trans. Electron Devices, vol. ED-16, pp. 64–77, Jan. 1969.
2. C. M. Snowden, M. J. Howes, and D. V. Morgan, “Large-signal modeling of GaAs MESFET operation,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1817–1824, Dec. 1983.
3. M. Reiser, “A two-dimensional numerical FET model for DC, AC and large-signal analysis,” IEEE Trans. Electron Devices, vol. ED-20, pp. 35–45, Jan. 1978.
4. T. Wada and J. Frey, “Physical basis of short-channel MESFET operation,” IEEE J. Solid-State Circuits, vol. SC-14, pp. 398–412, Apr. 1979.
5. W. R. Curtice and Y.-H. Yun, “Temperature model for the GaAs MESFET,” IEEE Trans. Electron Devices, vol. ED-28, pp. 954–961, Aug. 1981.
6. B. Camez, A. Cappy, A. Kaszynski, E. Constant, and G. Salmer, “Modeling of a submicrometer gate field-effect transistor including effects of nonstationary electron dynamics,” J. Appl. Phys., vol. 51, pp. 784–790, Jan. 1980.
7. R. K. Cook and J. Frey, “An efficient technique for two-dimensional simulation of velocity overshoot effects in Si and GaAs devices,” COMPEL, vol. 1, pp. 65–87, Feb. 1982.
8. P. A. Sandborn, J. R. East, and G. I. Haddad, “Quasi-two-dimensional modeling of GaAs MESFET's,” IEEE Trans. Electron Devices, vol. ED-34, pp. 985–991, May 1987.
9. C. M. Snowden and D. Loret, “Two-dimensional hot-electron models for short-gate-length GaAs MESFET's,” IEEE Trans. Electron Devices, vol. ED-34, pp. 212–223, Feb. 1987.
10. E. H. Rhoderick, “Metal semiconductor contacts,” IEEE Proc., vol. 129, pt. 1, pp. 1–14, Feb. 1982.
11. K. Lehovec and R. S. Miller, “Field distribution in junction field-effect transistors at large drain voltages,” IEEE Trans. Electron Devices, vol. ED-22, pp. 273–281, 1975.
12. A. Cappy, A. Vanoverschelde, M. Schortgen, C. Vesnaeyen, and G. Salmer, “Noise modeling of submicrometer-gate two-dimensional electron-gas field-effect transistors,” IEEE Trans. Electron Devices, vol. ED-32, pp. 2787–2796, Dec. 1985.
13. K. Blotekjaer, “Transport equations for electrons in two-valley semiconductors,” IEEE Trans. Electron Devices, vol. ED-17, pp. 4–22, Jan. 1970.
14. R. K. Cook and J. Frey, “Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET's,” IEEE Trans. Electron Devices, vol. ED-29, pp. 970–976, June 1982.
15. R. K. Mains, G. L. Haddad, and P. A. Blakey, “Simulation of GaAs IMPATT diodes including energy and velocity transport equations,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1327–1338, Oct. 1983.
16. M. S. Shur and L. F. Eastman, “I-V characteristics of GaAs MESFET with nonuniform doping profile,” IEEE Trans. Electron Devices, vol. ED-27, pp. 455–461, Feb. 1980.
17. T. Barton, “Characterization of the physical behavior of GaAs MESFETs,” Ph.D. dissertation, Univ. of Leeds, 1988.
18. E. Wasserstrom and J. McKenna, “The potential due to a charged metallic strip on a semiconductor surface,” Bell Syst. Tech. J., pp. 853–877, May-June 1970.
19. K. Yamaguchi and H. Kodera, “Drain conductance of junction gate FET's in the hot electron range,” IEEE Trans. Electron Devices, vol. ED-23, pp. 545–553, June 1976.
20. M. A. Khatibzadeh and R. J. Trew, “A large-signal, analytic model for the GaAs MESFET,” IEEE Trans. Microwave Theory Tech., vol. MTT-36, pp. 231–238, Feb. 1988.
21. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981, pp. 365–373.
22. T. Hariu, K. Takahashi, and Y. Shibata, “New modeling of GaAs MESFETs,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1743–1749, Dec. 1983.
23. P. H. Ladbrooke and S. R. Blight, “Low-field low frequency dispersion of transconductance in GaAs MESFET's with implications for other rate-dependent anomalies,” IEEE Trans. Electron Devices, vol. ED-35, pp. 257–267, Mar. 1988.
24. W. R. Frensley, “Power-limiting breakdown effects in GaAs MESFET's,” IEEE Trans. Electron Devices, vol. ED-28, pp. 962–970, Aug. 1981.
25. R. Wroblewski, G. Salmer, and Y. Crosnier, “Theoretical analysis of the DC avalanche breakdown in GaAs MESFETs,” IEEE Trans. Electron Devices, vol. ED-30, pp. 154–159, Feb. 1983.
26. C. M. Snowden, Semiconductor Device Modeling, 1st ed. London: Peter Peregrinus. 1988, pp. 53–54.
27. R. R. Pantoja, M. J. Howes, J. R. Richardson, and C. M. Snowden, “The design of microwave subsystems based on a physical device model,” in Proc. IEEE ISCAS Int. Symp. Circuits and Systems (Finland) May 1988, pp. 2065–2068.