Monte Carlo Simulation of Short-Channel Heterostructure Field-Effect Transistors

IEEE Transactions on Electron Devices

Volumn 38, Issue 4, 1991, Pages 840-851

  Jensen, Geir U ^a   Lund, Bjornar ^b   Fjeldly, Tor A ^b   Shur, Michael ^c  

^a UNIVERSITY OF VIRGINIA   (United States)

^b NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^c UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL STATISTICS--MONTE CARLO METHODS; PHYSICS--SOLID STATE;

HETEROSTRUCTURE FET; IMPLANTED CONTACTS; MONTE CARLO SIMULATION; PLANAR DOPED DEVICES; SHORT CHANNEL EFFECTS;

TRANSISTORS, FIELD EFFECT;

EID: 0026142483     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.75214     Document Type: Article

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