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Journal of Applied Physics
Volumn 57, Issue 2, 1985, Pages 426-431
Electrical properties of silicon nitride films plasma-deposited from SiF4, N2, and H2 source gases
(4)
Fujita, Shizuo
a
Ohishi, Toshiyuki
a
Toyoshima, Hideo
a
Sasaki, Akio
a
a
KYOTO UNIVERSITY
(
Japan
)
Author keywords
[No Author keywords available]
Indexed keywords
EID
:
0000143157
PISSN
:
00218979
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1063/1.334768
Document Type
:
Article
Times cited : (
49
)
References (
22
)
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Electronic Processes in Noncrystalline Materials
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.
