Effects of water vapor anneal on MIS devices made of nitrided gate dielectrics

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 226-227

  Wang, Xiewen ^a   Khare, Mukesh ^a   Ma, T P ^a  

^a YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; FURNACES; GATES (TRANSISTOR); LEAKAGE CURRENTS; NITRIDES; RELIABILITY; SILICON NITRIDE; TRANSCONDUCTANCE; VAPORS; WATER;

CURRENT DRIVEABILITY; STEAM FURNACE;

MIS DEVICES;

EID: 0029713484     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)