Application of JVD nitride gate dielectric to a 0.35 micron CMOS process for reduction of gate leakage current and boron penetration

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 647-650

  Tseng, H H ^a   Tsui, P G Y ^a   Tobin, P J ^a   Mogab, J ^a   Khare, M ^a   Wang, X W ^a   Ma, T P ^a   Hegde, R ^a   Hobbs, C ^a   Veteran, J ^a   Hartig, M ^a   Kenig, G ^a   Wang, V ^a   Blumenthal, R ^a   Cotton, R ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

JET VAPOR DEPOSITION (JVD);

DIELECTRIC DEVICES; GATES (TRANSISTOR); JETS; LEAKAGE CURRENTS; NITRIDES; SEMICONDUCTING BORON; SEMICONDUCTOR DEVICE MANUFACTURE; VAPOR DEPOSITION;

CMOS INTEGRATED CIRCUITS;

EID: 84886448029     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)