Ultra-thin silicon nitride gate dielectric for deep-sub-micron CMOS devices

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1997, Pages 51-52

  Khare, Mukesh ^a   Guo, Xin ^a   Wang, X W ^a   Ma, T P ^a   Cui, G J ^a   Tamagawa, T ^a   Halpern, B L ^a   Schmitt, J J ^a  

^a YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CMOS INTEGRATED CIRCUITS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LEAKAGE CURRENTS; MOSFET DEVICES; SILICA; SILICON NITRIDE; TRANSCONDUCTANCE; ULTRATHIN FILMS;

ULTRATHIN SILICON NITRIDE GATE DIELECTRIC;

GATES (TRANSISTOR);

EID: 0030648916     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/vlsit.1997.623690     Document Type: Conference Paper

References (7)