Stress-Induced Current in Nitride and Oxidized Nitride Thin Films

IEEE Transactions on Electron Devices

Volumn 41, Issue 12, 1994, Pages 2417-2422

  Mazumder, Motaharul K ^a   Kobayashi, Kiyoteru ^a   Mitsuhashi, Jun ichi ^a   Koyama, Hiroshi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT PROPERTIES; LEAKAGE CURRENTS; MOS DEVICES; MOSFET DEVICES; NITRIDES; OXIDATION; RANDOM ACCESS STORAGE; THIN FILMS;

DEFECT DENSITY; MEAN TO TIME FAILURE; STRESS GENERATED TRAPS; STRESS INDUCED CURRENTS;

SEMICONDUCTING FILMS;

EID: 0028731971     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.337458     Document Type: Article

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