Two‐band conduction of amorphous silicon nitride

physica status solidi (a)

Volumn 26, Issue 2, 1974, Pages 489-495

  Ginovker, A S ^a   Gritsenko, V A ^a   Sinitsa, S P ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MIS;

EID: 0016334979     PISSN: 00318965     EISSN: 1521396X     Source Type: Journal    
DOI: 10.1002/pssa.2210260211     Document Type: Article

References (14)

1. Electronic Processes in Metal-Silicon Nitride-Silicon Dioxide-Silicon Systems
2. Electrical Properties of Vapor-Deposited Silicon Nitride and Silicon Oxide Films on Silicon
3. The metal-nitride-oxide-silicon (MNOS) transistor—Characteristics and applications
4. Electrical Characteristics of Silicon Nitride Films Prepared by Silane-Ammonia Reaction
5. The structure of amorphous silicon nitride films