Ultra-thin nitride/oxide stack dielectric produced by in-situ jet vapor deposition

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 1997, Pages 172-176

  Shi, Y ^a   Wang, X W ^a   Ma, T P ^a   Cui, G J ^a   Tamagawa, T ^a   Halpern, B L ^a   Schmitt, J J ^a  

^a YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); JETS; LEAKAGE CURRENTS; NITRIDES; OXIDES; SEMICONDUCTING SILICON; ULTRATHIN FILMS; VAPOR DEPOSITION;

JET VAPOR DEPOSITION; ULTRATHIN NITRIDE/OXIDE STACK DIELECTRICS;

DIELECTRIC FILMS;

EID: 0030717944     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)