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Journal of Applied Physics

Volumn 58, Issue 3, 1985, Pages 1248-1254

The structure of plasma-deposited silicon nitride films determined by infrared spectroscopy

(2) Knolle, W R a Osenbach, J W a

a LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33646213271 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.336116 Document Type: Article

Times cited : (82)

References (13)

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- Fifth Advanced Plasma Technology Conference and Seminar, Monterey, CA, Conference sponsored by E. T. Equipments, Inc., Hauppauge, NY.
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- Lanford, W.A.¹ Rand, M.J.²

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- (1976) Introduction to Ceramics , pp. 95
- Kingery, W.D.¹ Bower, H.K.² Uhlmann, D.R.³

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- Knolle, W.R.¹ Maxwell, H.R.²

12
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- The melting point of Si is [formula omitted] and that of [formula omitted] is greater than 2000°C. Therefore the Si‐N bond is stronger than the Si‐Si bond.

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- Lucovsky, G.¹ Yang, J.² Chao, S.S.³ Tyler, J.E.⁴ Czubatyj, W.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.