A Comparison Between Silicon Nitride Films Made by PCVD of N2-SiH4/Ar and N2-SiH4/He

Journal of the Electrochemical Society

Volumn 132, Issue 7, 1985, Pages 1763-1766

  Loos, H ^b   Calster, A Van ^a   Lequesne, A ^b  

^a GHENT UNIVERSITY   (Belgium)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES;

PASSIVATING PROPERTIES; PINHOLE DENSITY; SILICON NITRIDE FILMS;

SILICON COMPOUNDS;

EID: 0022093472     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2114207     Document Type: Article

References (8)

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