High-Quality MNS Capacitors Prepared by Jet Vapor Deposition at Room Temperature

IEEE Electron Device Letters

Volumn 13, Issue 9, 1992, Pages 482-484

  Wang, Dechang ^a   Ma, Tso Ping ^a   Golz, John W ^b   Halpern, Bret L ^b   Schmitt, Jerome J ^b  

^a YALE UNIVERSITY   (United States)

^b Jet Process Corporation ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLOW OF FLUIDS--JETS; METALS AND ALLOYS; SEMICONDUCTING SILICON;

JET VAPOR DEPOSITION; MNS CAPACITORS;

CAPACITORS;

EID: 0026916586     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.192802     Document Type: Article

References (6)

1. J. J. Schmitt, “Method and apparatus for the deposition of solid films of material from a jet stream entraining the gaseous phase of said material,” U.S. Patent 4 788 082, 1988.
2. B. L. Halpern, “Fast flow deposition of metal atoms on liquid surfaces,” J. Colloid & Interface Sci., vol. 86, p. 337, 1982.
3. B. Chen et al., “Plasma assisted gas jet deposited dielectric films,” in Proc. Symp. Plasma Processing, vol. 90–14, 1990, p. 628.
4. B. L. Halpern, J. J. Schmitt, J. W. Golz, Y. Di, and D. L. Johnson, “Gas jet deposition of thin films,” Appl. Surface Sci., vol. 48/49, p. 19, 1991.
5. C. Hwang et al., “Ferroelectric Pb(Zr,Ti)O 3 thin films prepared by gas jet deposition,” presented at the 3rd Int. Symp. Integrated Ferroelectrics, Apr. 3–5, 1991.
6. D. V. Tsu, G. Lucovsky, and M. J. Mantini, “Local atomic structure in thin films of silicon nitride and silicon diimide produced by remote plasma-enhanced chemical-vapor deposition,” Phys. Rev. B, vol. 33, no. 10, p. 7069, 1986.