Highly reliable silicon nitride thin films made by jet vapor deposition

Japanese Journal of Applied Physics

Volumn 34, Issue 2S, 1995, Pages 955-958

  Wang, Xie Wen ^a   Ma, Tso Ping ^a   Cup, Guang Ji ^b   Tamagawa, Takashi ^b   Golz, John W ^b   Karechp, Simon ^b   Halpern, Bret H ^b   Schmitt, Jerome J ^b  

^a YALE UNIVERSITY   (United States)

^b Jet Process Corp   (United States)

Author keywords

Jet vapor deposition; MNS capacitor; Reliability; Silicon nitride; Thin film

Indexed keywords

ELECTRIC PROPERTIES; HOT CARRIERS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; RADIATION DAMAGE; SILICON NITRIDE; THERMAL EFFECTS; THIN FILMS;

GATE QUALITY SILICON NITRIDE; GATE QUALITY SILICON NITRIDE THIN FILMS; INTERFACE TRAPS; JET VAPOR DEPOSITION; METAL NITRIDE SILICON CAPACITOR; THERMAL OXIDE LAYERS;

VAPOR DEPOSITION;

EID: 0029254359     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.955     Document Type: Article

References (6)

1. J. J. Schmitt: U.S. Patent No. 4788082 (1988).
2. B. L. Halpern: J. Colloid Interface Sci. 86 (1982) 337.
3. C. L. Hwang, B. Chen, T. P. Ma, J. Golz, Y. Di, B. Halpern an
4. D. Wang, T.-P. Ma, J. W. Golz, B. L. Halpern and J. J. SchmittIEEE Electron Device. Lett. EDL-13 (1992) 482.
5. B. Halpern, J. Schmitt, J. Golz, Y. Di and D. Johnson: AppSurf. Sci. 48/49 (1991) 19.
6. D. V. Tsu, G. Lucovsky and M. J. Mantini: Phys. Rev. B 3(1986) 7069.