Mobility behavior of n-channel and p-channel MOSFET's with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical vapor deposition

IEEE Transactions on Electron Devices

Volumn 43, Issue 5, 1996, Pages 753-758

  Vogel, Eric M ^b   Hill, Winford L ^b   Misra, Veena ^b   McLarty, Peter K ^a,b   Wortman, Jimmie J ^a,b   Hauser, J R ^a,b   Morfouli, P ^c   Ghibaudo, Gérard ^c   Ouisse, T ^c  

^a IEEE

^b North Carolina State University   (United States)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; GATES (TRANSISTOR); HYDROGEN; NITROGEN;

ELECTRON MOBILITY; HOLE MOBILITY; LOW PRESSURE RAPID THERMAL CHEMICAL VAPOR DEPOSITION; OXYNITRIDE GATE DIELECTRICS; REACTIVE GASES;

MOSFET DEVICES;

EID: 0030150046     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.491252     Document Type: Article

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