Superior Low-Pressure-Oxidized Si3N4 Films on Rapid-Thermal-Nitrided Poly-Si for High-Density DRAM's

IEEE Electron Device Letters

Volumn 16, Issue 11, 1995, Pages 509-511

  Cheng, H C ^a   Liu, H W ^a   Su, H P ^a   Hong, G ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTROCHEMICAL ELECTRODES; NITRIDING; OXIDATION; PERMITTIVITY; POLYCRYSTALLINE MATERIALS; RANDOM ACCESS STORAGE; SEMICONDUCTING SILICON; SILICA;

DYNAMIC RANDOM ACCESS MEMORY; LOW PRESSURE OXIDIZED FILMS; POLYSILICON; RAPID THERMAL NITRIDING; STACKED STORAGE CAPACITORS; TIME DEPENDENT DIELECTRIC BREAKDOWN;

DIELECTRIC FILMS;

EID: 0029408620     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.468283     Document Type: Article

References (9)

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