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Journal of Applied Physics

Volumn 58, Issue 1, 1985, Pages 484-489

Hydrogen bonding configurations in silicon nitride films prepared by plasma-enhanced deposition

(2) Maeda, Masahiko a Nakamura, Hiroaki a

a NTT CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013309578 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.335650 Document Type: Article

Times cited : (71)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.