Extending gate dielectric scaling limit by use of nitride or oxynitride

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1995, Pages 109-110

  Wang, X W ^a   Shi, Y ^a   Ma, T P ^a   Cui, G J ^a   Tamagawa, T ^a   Golz, J W ^a   Halpern, B L ^a   Schmitt, J J ^a  

^a YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CALCULATIONS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRON TUNNELING; GATES (TRANSISTOR); LEAKAGE CURRENTS; NITRIDES; PERMITTIVITY; SILICA; VAPOR DEPOSITION; VOLTAGE CONTROL;

EQUIVALENT OXIDE THICKNESSES; GATE DIELECTRIC SCALING LIMIT; JET VAPOR DEPOSITED NITRIDE; NITRIDE FILMS; OXYNITRIDE; TUNNELING CURRENT CALCULATION; VOLTAGE LIMIT;

DIELECTRIC FILMS;

EID: 0029515649     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)