Use of jet-vapor deposited silicon nitride for scaled DRAM applications

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 1997, Pages 193-197

  Guo, X ^a   Wang, X W ^a   Ma, T P ^a   Cui, G J ^a   Tamagawa, T ^a   Halpern, B L ^a   Schmitt, J J ^a  

^a YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

JETS; LEAKAGE CURRENTS; RANDOM ACCESS STORAGE; SEMICONDUCTOR DEVICE MANUFACTURE; ULTRATHIN FILMS; VAPOR DEPOSITION;

DYNAMIC RANDOM ACCESS MEMORY (DRAM); JET VAPOR DEPOSITION;

SILICON NITRIDE;

EID: 0030691599     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)