“Border Traps” in MOS Devices

IEEE Transactions on Nuclear Science

Volumn 39, Issue 2, 1992, Pages 269-271

  Fleetwood, Daniel M ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS--DEFECTS; MICROWAVES; SEMICONDUCTING SILICON;

BORDER TRAPS; SPIN DEPENDENT RECOMBINATION;

SEMICONDUCTOR DEVICES, MOS;

EID: 0026853994     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.277495     Document Type: Article

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