Effects of fluorine implants on induced charge components in gate-oxides under constant-current fowler-nordheim stress

IEEE Transactions on Electron Devices

Volumn 44, Issue 9, 1997, Pages 1432-1440

  Nguyen, Tan Khai ^a,b   Landsberger, Les M ^a   Jean, Claude ^a   Logiudice, Vito ^a  

^a Dept of Electrical and Computer Engineering   (Canada)

^b Mitel Networks Corporation   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRON TUNNELING; FLUORINE; GATES (TRANSISTOR); INTERFACES (MATERIALS); MOS DEVICES; SEMICONDUCTING SILICON; SILICA;

CONSTANT CURRENT FOWLER NORDHEIM STRESS;

CAPACITORS;

EID: 0031236244     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.622598     Document Type: Article

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