Radiation hardened metal-oxide-semiconductor devices with gate dielectrics grown by rapid thermal processing in O2 with diluted NF3

Applied Physics Letters

Volumn 58, Issue 4, 1991, Pages 425-427

  Ahn, J ^a   Lo, G Q ^a   Ting, W ^a   Kwong, D L ^a   Kuehne, John ^b   Magee, Charles W ^c  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c Evans East   (United States)

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Indexed keywords

EID: 2742580207     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.104657     Document Type: Article

References (14)