Improved Hot-Carrier Resistance With Fluorinated Gate Oxides

IEEE Electron Device Letters

Volumn 11, Issue 1, 1990, Pages 3-5

  MacWilliams, Kenneth P ^a   Halle, L F ^a   Zietlow, T C ^a  

^a AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLUORINE COMPOUNDS; OXIDES; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

FLUORINATED GATE OXIDES; HOT-CARRIER RESISTANCE; ION IMPLANTATION; N-CHANNEL MOSFETS; SUBTHRESHOLD MEASUREMENTS; THRESHOLD VOLTAGE SHIFT;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025208484     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.46912     Document Type: Article

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