Properties of the fluorine-implanted Si-SiO2 system

Solid State Electronics

Volumn 34, Issue 8, 1991, Pages 889-892

  Virdi, G S ^a   Rauthan, C M S ^a   Pathak, B C ^a   Khokle, W S ^a  

^a CENTRAL ELECTRONICS ENGINEERING RESEARCH INSTITUTE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

FLUORINE; SEMICONDUCTING SILICON COMPOUNDS;

FLUORINE IONS; FLUORINE-IMPLANTED SYSTEM;

SEMICONDUCTING SILICON;

EID: 0026206834     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(91)90236-R     Document Type: Article

References (15)

1. Some Effects of “Trichloroethylene Oxidation” on the Characteristics of MOS Devices
2. Reduction of interface-state density by F2 treatment in a metal-oxide-semiconductor diode prepared from a photochemical vapor deposited SiO2 film
3. Some studies of BF2and B+F implanted Silicon
4. A Structural and Electrical Comparison of BCl and BF[sub 2] Ion-Implanted Silicon