The Characteristics of Slow and Fast Interface States in Fluorinated Metal Oxide Semiconductor Devices

Journal of the Electrochemical Society

Volumn 139, Issue 10, 1992, Pages 2974-2977

  Xie, Dunxian D ^a   Young, Donald R ^b  

^a Glocom Inc ^*  (United States)

^b LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; FLUORINE COMPOUNDS; INTERFACES (MATERIALS); MOS DEVICES; SILICA;

FAST INTERFACE STATES; FLUORINATED METAL OXIDES; SLOW INTERFACE STATES;

SEMICONDUCTING SILICON;

EID: 0026928884     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2069018     Document Type: Article

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