Radiation effects on fluorinated field oxides and associated devices

IEEE Transactions on Nuclear Science

Volumn 37, Issue 6, 1990, Pages 2026-2032

  Nishioka, Yasushiro ^a   Itoga, Toshiyuki ^a   Ohyu, Kiyonori ^a   Kato, Masataka ^a   Ma, Tso Ping ^b  

^a HITACHI LTD   (Japan)

^b YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLUORINE; SEMICONDUCTING SILICON--ION IMPLANTATION; SILICA;

LOCOS FIELD OXIDES;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025660047     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.101225     Document Type: Article

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