Metal-oxide-semiconductor gate oxide reliability and the role of fluorine

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 10, Issue 4, 1992, Pages 705-712

  Ma, T P ^a  

^a YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21144480206     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.577714     Document Type: Conference Paper

References (89)

1. A. Bhattacharya, C. Vorst, and A. H. Carim, J. Electrochem. Soc. 132, 1900 (1985).
2. G. J. Dunn, R. Jayaraman, W. Yang, and C. G. Sodini, Appl. Phys. Lett. 52, 1713 (1988).
3. T. Hori, H. Iwasaki, and K. Tsuji, IEEE Trans, Electron Dev. ED 36, 340 (1989).
4. E. da Silva, Y. Nishioka, and T. P. Ma, IEEE Trans. Nucl. Sci. NS 34, 1190 (1987).
5. Y. Nishioka, E. da Silva, Y. Wang, and T. P. Ma, IEEE Electron Dev. Lett. EDL 9, 38 (1987).
6. G. Lo, W. Ting, D. Kwong, J. Kuehne, and C. Magee, IEEE Electron Dev. Lett. EDL 11, 511 (1990).
7. Y. Nishioka, Ohji, Natuaki, Mukai, and Ma, IEEE Electron Dev. Lett. EDL 10, 141 (1989).
8. P. Wright, N. Kasai, S. Inoue, and K. Saraswat, IEEE Electron Dev. Lett. EDL 10, 347 (1989).
9. K. MacWilliams, L. Halle, and T. Zietlow, IEEE Electron Dev. Lett. EDL 11, 3 (1990).
10. Y. Ohno et al., Technical Digest, 1988 Symposium on VLSI Technology, p. 35.
11. Y. Nishioka, H. Shinriki, and K. Mukai, J. Electrochem. Soc. 135, 138C (1988).
12. T. P. Ma and Paul V. Dressendorfer, Ionizing Radiation Effects in MOS Devices & Circuits (Wiley, New York, 1989).
13. T. P. Ma, Semicond. Sci. Technol. 4, 1061 (1989).
14. Y. Nishioka, E. F. da Silva, and T. P. Ma, IEEE Trans. Nucl. Sci. NS 35, 1227 (1988).
15. G. F. Derbenwick and B. L. Gregory, IEEE Trans. Nucl. Sci. NS 22, 2151 (1975).
16. W. R. Dawes, G. F. Derbenwick, and B. L. Gregory, IEEE J. Solid State Circuits, SC 11, 459 (1976).
17. H. L. Hughes, IEEE Trans. Nucl. Sci. NS 22, 2118 (1975).
18. H. L. Hughes and E. E. King, IEEE Trans. Nucl. Sci. NS 23, 1573 (1976).
19. D. H. Phillips, IEEE Trans. Nucl. Sci. NS 22, 2190 (1975).
20. G. W. Hughes and G. W. Brucker, Solid State Technol. 22, 70 (1979).
21. G. W. Hughes, R. J. Powell, and M. H. Woods, Appl. Phys. Lett. 29, 377 (1976).
22. N. S. Saks, M. G. Ancona, and J. A. Modolo, IEEE Trans. Nucl. Sci. NS 33, 1185 (1986).
23. T. P. Ma, Appl. Phys. Lett. 27, 615 (1975).
24. E. P. EerNisse and G. F. Derbenwick, IEEE Trans. Nucl. Sci. NS 23, 1534 (1976).
25. K. Naruke, M. Yoshida, K. Malguchi, and H. Tango, IEEE Trans. Nucl. Sci. NS 30, 4054 (1983).
26. J. Schwank, D. Fleetwood, P. Winokur, P. Dressendorfer, D. Turnip, and D. Sanders, IEEE Trans. Nucl. Sci. NS 34, 1152 (1987).
27. A. G. Revesz, IEEE Trans. Nucl. Sci. NS 24, 2102 (1977).
28. K. Aubuchon, E. Harari, D. Leong, and C. Chang, IEEE Trans. Nucl. Sci. NS 21, 167 (1974).
29. H. L. Hughes, IEEE Ninth Annual Proceedings on Reliability Physics Symposium, 1971 (unpublished), p. 33.
30. V. Zekeriya and T. P. Ma, Appl. Phys. Lett. 47, 54 (1985).
31. K. Kasama, F. Toyokawa, M. Tsukiji, M. Sakamoto, and K. Kobayashi, IEEE Trans. Nucl. Sci. NS 33, 1210 (1986).
32. R. K. Smeltzer, IEEE Trans. Nucl. Sci. NS 27, 1745 (1980).
33. P. Winokur, E. Evret, D. Fleetwood, P. Dressendorfer, and D. Turpin, IEEE Trans. Nucl. Sci. NS 32, 3954 (1985).
34. K. F. Galloway, IEEE Trans. Nucl. Sci. NS 25, 1469 (1978).
35. H. L. Hughes, IEEE Trans. Nucl. Sci. NS 26, 5053 (1979).
36. J. Chen, R. Henderson, D. Patterson, and R. Martin, IEEE Electron Dev. Lett. EDL 3, 13 (1982).
37. V. Zekeriya and T. P. Ma, IEEE Trans. Nucl. Sci. NS 31, 1261 (1984).
38. F. J. Grunthaner, P. J. Grunthaner, and J. Maserjian, IEEE Trans. Nucl. Sci. NS 29, 1462 (1982).
39. K. Kasama, M. Tsukiji, and K. Kobayashi, IEEE Trans. Nucl. Sci. NS 34, 1202 (1987).
40. R. E. Anderson, IEEE Trans. Nucl. Sci. NS 26, 5180 (1979).
41. A. G. Sobnis, IEEE Trans. Nucl. Sci. NS 32, 3905 (1985).
42. F. McLean, E. Boesch, and J. McGarrity, in The Physics of Sio2 and Its Interfaces (Pergamon, New York, 1978), p. 19.
43. S. K. Lai, J. Appl. Phys. 54, 2540 (1983).
44. J. Schwank, P. Winokur, P. McWhorter, F. Sexton, P. Dressendorfer, and D. Turpin, IEEE Trans. Nucl. Sci. NS 31, 1434 (1984).
45. T. R. Oldham, A. J. Lelis, and F. B. McLean, IEEE Trans. Nucl. Sci. NS 33, 1203 (1986).
46. P. S. Winokur, J. M. McGarrity, and H. E. Boesh, Jr., IEEE Trans. Nucl. Sci. NS 23, 1580 (1976).
47. T. H. Ning, Solid State Electron. 21, 273 (1978).
48. P. E. Cottrell, R. R. Troutman, and T. H. Ning, IEEE Tran. Electron Dev. ED 24, 1200 (1977).
49. T. H. Ning and H. N. Yu, J. Appl. Phys. 45, 5373 (1974).
50. Y. Nissan-Cohen, J. Shappir, and D. Frohman-Bentchkowsky, J. Appl. Phys. 57, 2830 (1985).
51. P. Heremans, R. Bellens, G. Groeseneken, and H. Maes, IEEE Trans. Electron Dev. ED 35, 2194 (1988).
52. F. C. Hsu and S. Tam, IEEE Electron Dev. Lett. EDL 5, 50 (1984).
53. E. Takeda, A. Shimizu, and T. Hagiwara, IEEE Electron Dev. Lett. EDL 4, 329 (1983).
54. E. Takeda, IEEE Proc. 131, 153 (1984).
55. K. Hofmann, C. Werner, W. Weber, and G. Dorda, IEEE Trans. Electron Dev. ED 32, 691 (1985).
56. C. Hu, S. Tam, F. Hsu, P. Ko, T. Chan, K. Terill, IEEE Trans. Electron Dev. ED 32, 375 (1985).
57. E. H. Nicollian and C. N. Berglund, J. Appl. Phys. 41, 3052 (1970).
58. R. J. Powell and C. N. Berglund, J. Appl. Phys. 43, 4390 (1971).
59. M. Lenzlinger and E. H. Snow, J. Appl. Phys. 40, 278 (1969).
60. Y. Nishioka, E. da Silva, and T. P. Ma, IEEE Electron Dev. Lett. EDL 8, 566 (1987).
61. Y. Nishioka, E. da Silva, and T. P. Ma, Appl. Phys. Lett. 52, 720 (1988).
62. H. E. Boesh, Jr., and J. M. McGarrity, IEEE Trans. Nucl. Sci. NS 26, 4814 (1979).
63. M. Knoll, D. Braunig, and W. R. Fahrner, IEEE Trans. Nucl. Sci. NS 29, 1471 (1982).
64. E. Takeda, I. Hagiwara, and N. Suzuki, J. Appl. Phys. 55, 3180 (1984).
65. C. M. Osburn and D. W. Ormond, J. Electrochem. Soc. 119, 597 (1972).
66. T. H. DiStefano and M. Shatzkes, J. Vac. Sci. Technol. 13, 50 (1976).
67. P. Solomon, J. Vac. Sci. Technol. 14, 1122 (1977).
68. N. Klein, Thin Solid Films 7, 149 (1971).
69. E. Harari, J. Appl. Phys. 49, 2478 (1978).
70. I-C. Chen, S. E. Holland, and C. M. Hu, IEEE Trans. Electron Dev. ED 32, 413 (1985).
71. I. Wu, M. Koyanagi, S. Holland, T. Huang, J. Mikkelsen, R. Bruce, and A. Chiang, J. Electrochem. Soc. 136, 1638 (1989).
72. P. Olovo, T. N. Nguyen, and B. Ricco, IEEE Trans. Electron Dev. ED 35, 2259 (1988).
73. J. Sune, E. Farres, I. Placencia, N. Barriol, F. Martin, and X. Aymerich, Appl. Phys. Lett. 55, 128 (1989).
74. S. Brorson, D. DiMaria, M. Fischetti, F. Pesavento, P. Solomon, and D. Dong, J. Appl. Phys. 58, 1302 (1985).
75. Y. Nissan-Cohen, J. Shappir, and D. Frohman-Bentchkowsky, J. Appl. Phys. 58, 2252 (1985).
76. Z. A. Weinberg and T. N. Nguyen, J. Appl. Phys. 61, 1947 (1987).
77. D. J. DiMaria and J. W. Stasiak, J. Appl. Phys. 65, 2342 (1989).
78. Y. Nishioka, K. Ohyu, Y. Ohji, M. Kato, E. da Silva, and T. P. Ma, IEEE Trans. Nucl. Sci. NS 36, 2116 (1989).
79. Y. Nishioka, K. Ohyu, Y. Ohji, and T. P. Ma, IEEE Electron Dev. Lett. EDL 10, 540 (1989).
80. X. W. Wang, A. Balasinski, and T. P. Ma, Extended Abstract, 179th Electrochemical Society Meeting, Washington DC, May 7 1991, Paper 243.
81. B. yu, E. Arai, Y. Nishioka, Y. Ohji, S. Iwata, and T. P. Ma, Appl. Phys. Lett. 56, 1430 (1990).
82. T. Takahagi, A. Ishitani, and H. Kuroda, J. Appl. Phys. 69, 803 (1991).
83. S. R. Kasi, M. Liehr, and S. Cohen, Appl. Phys. Lett. 58, 2975 (1991).
84. M. Morita, T. Kubo, T. Ishihara, and M. Hirose, Appl. Phys. Lett. 45, 1312 (1984).
85. D. Kouvatsos, J. Huang, and R. Jaccodine, J. Electrochem. Soc. 138, 1752 (1991).
86. T. B. Hook and T. P. Ma, Appl. Phys. Lett. 48, 1208 (1986).
87. Y. Nishioka, Y. Ohji, K. Mukai, T. Sugano, Y. Wang, and T. P. Ma, Appl. Phys. Lett. 54, 1127 (1989).
88. P. J. Wright and K. Saraswat, IEEE Electron Dev. Lett. 10, 397 (1989).
89. Y. Nishioka, K. Ohyu, Y. Ohji, N. Natsuaki, K. Mukai, and T. P. Ma, IEEE Electron Dev. Lett. 10, 397 (1989).