The Effect of Fluorine in Silicon Dioxide Gate Dielectrics

IEEE Transactions on Electron Devices

Volumn 36, Issue 5, 1989, Pages 879-889

  Wright, Peter J ^a   Saraswat, Krishna C ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLUORINE; SEMICONDUCTOR DEVICES, MOSFET; SILICA--IMPURITIES;

GATE DIELECTRICS; INTERFACE CHARACTERISTICS; SILICON DIOXIDE;

DIELECTRIC MATERIALS;

EID: 0024663207     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.299669     Document Type: Article

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