Hot-Carrier-Degradation Characteristics for Fluorine-Incorporated nMOSFET’s

IEEE Transactions on Electron Devices

Volumn 37, Issue 6, 1990, Pages 1426-1431

  Kasai, Naoki ^a   Wright, Peter J ^a,b   Saraswat, Krishna C ^a  

^a STANFORD UNIVERSITY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLUORINE; SEMICONDUCTING SILICON;

FLUORINE IMPLANTATION; FLUORINE-INCORPORATED DEVICE; HOT-CARRIER IMMUNITY; HOT-CARRIER INJECTION; HYDROGEN ANNEALING; POLYSILICON GATE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025445359     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.106236     Document Type: Article

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